Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models

The differences between two widely used intermediate-level charge transport models are investigated. The origins of the models are reviewed, and mathematical relationships between the models are established. The practical consequences of the differences are investigated by comparing results obtained for several submicron structures. The predictions of the two models are shown to differ qualitatively, as well as quantitatively, for certain situations. An appendix summarizes the numerical techniques used to implement the models in a device simulator. >

[1]  U. Ravaioli,et al.  An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects , 1992, IEEE Electron Device Letters.

[2]  K. Blotekjaer.  Transport equations for electrons in two-valley semiconductors , 1970 .

[3]  Ting-Wei Tang,et al.  Extension of the Scharfetter—Gummel algorithm to the energy balance equation , 1984 .

[4]  V. Axelrad,et al.  Implementation and Applications of the Hydrodynamic Model in a General Purpose Device Simulator , 1991 .

[5]  S. Laux,et al.  Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors , 1989, International Technical Digest on Electron Devices Meeting.

[6]  B. Meinerzhagen,et al.  A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations , 1992, NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,.

[7]  R. E. Thomas,et al.  Carrier mobilities in silicon empirically related to doping and field , 1967 .

[8]  R. Stratton,et al.  Semiconductor current-flow equations (diffusion and degeneracy) , 1972 .

[9]  R. K. Cook,et al.  Numerical simulation of hot-carrier transport in silicon bipolar transistors , 1983, IEEE Transactions on Electron Devices.

[10]  Y. Apanovich,et al.  An Investigation of Coupled and Decoupled Iterative Algorithms for Energy Balance Calculations , 1993 .

[11]  W. L. Engl,et al.  The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors , 1988 .

[12]  A generalized hydrodynamic model capable of incorporating Monte Carlo results (LDD MOS devices) , 1989, International Technical Digest on Electron Devices Meeting.

[13]  Roberto Guerrieri,et al.  A new discretization strategy of the semiconductor equations comprising momentum and energy balance , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[14]  K. Bløtekjær,et al.  Collision Integrals for Displaced Maxwellian Distribution , 1969 .

[15]  T. J. Bordelon,et al.  An evaluation of energy transport models for silicon device simulation , 1991 .

[16]  Stanley Osher,et al.  Solution of the hydrodynamic device model using high-order nonoscillatory shock capturing algorithms , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[17]  R. Stratton,et al.  Diffusion of Hot and Cold Electrons in Semiconductor Barriers , 1962 .

[18]  G. Baccarani,et al.  The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors , 1990, International Technical Digest on Electron Devices.

[19]  E. Lyumkis,et al.  TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION , 1992 .

[20]  R. V. Overstraeten,et al.  Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .

[21]  Jacob K. White,et al.  Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[22]  B. Polsky,et al.  Half-implicit difference scheme for numerical simulation of transient processes in semiconductor devices , 1986 .

[23]  Computation of Drain and Substrate Ultra-Short-Channel nMOSFET's Using the Hydrodynamic Model Currents in , 1993 .

[24]  Robert W. Dutton,et al.  Analysis of Spurious Velocity Overshoot in Hydrodynamic Simulations , 1992, NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,.