论文信息 - A new static memory cell based on the reverse base current effect of bipolar transistors

A new static memory cell based on the reverse base current effect of bipolar transistors

A SRAM cell that consists of a bipolar transistor and an MOS transistor is proposed. The cell's principle of operation is based on the reverse base current (RBC) of a bipolar transistor. It has been fabricated by conventional BiCMOS technology, using double-poly Si. A cell size of 8.58 mu m/sup 2/ is realized in a 1.0- mu m ground rule. The mechanism and characteristics of this cell are discussed. >

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