Electron Pair Production at High Energy in a Silicon Single Crystal

Electron pair production in a silicon single crystal was studied by means of a 1-Bev electron synchrotron gamma beam. Data are presented showing the relative variation of the electron pair production cross section in silicon single crystals at 293 deg K vs. theta (the angle between the gamma beam and the crystal axis STA100!). The results were in good agreement with the calculations of Uberall. (C.J.G.)