Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots.

[1]  Jamie D. Phillips,et al.  Room temperature luminescence from self-organized quantum dots with high size uniformity , 1997 .

[2]  D. Klotzkin,et al.  Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers , 1997, IEEE Photonics Technology Letters.

[3]  Jasprit Singh,et al.  Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study , 1997 .

[4]  Henry I. Smith,et al.  FAR-INFRARED EMISSION FROM HOT QUASI-ONE-DIMENSIONAL QUANTUM WIRES IN GAAS , 1995 .

[5]  Carlo Sirtori,et al.  Mid‐infrared field‐tunable intersubband electroluminescence at room temperature by photon‐assisted tunneling in coupled‐quantum wells , 1994 .

[6]  N. N. Ledentsov,et al.  Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots , 1998 .

[7]  Jamie D. Phillips,et al.  Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .

[8]  Jasprit Singh,et al.  Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy , 1998 .

[9]  Elias Towe,et al.  NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS/GAAS QUANTUM DOT INFRARED PHOTODETECTORS , 1998 .

[10]  Simon Fafard,et al.  Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots , 1999 .

[11]  P. Petroff,et al.  Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors , 1998 .

[12]  X. Fang,et al.  Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells , 1999 .

[13]  J. Singh,et al.  Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities , 1996, IEEE Photonics Technology Letters.

[14]  Nikolai N. Ledentsov,et al.  Energy relaxation by multiphonon processes in InAs/GaAs quantum dots , 1997 .

[15]  Allen,et al.  Intersubband emission from semiconductor superlattices excited by sequential resonant tunneling. , 1989, Physical review letters.

[16]  J. Faist,et al.  Quantum cascade unipolar intersubband light emitting diodes in the 8–13 μm wavelength region , 1995 .

[17]  Z. Moussa,et al.  Room temperature infrared intersubband photoluminescence in GaAs quantum wells , 1997 .

[18]  G. Abstreiter.  Micro-Raman spectroscopy for characterization of semiconductor devices , 1991 .

[19]  Jasprit Singh,et al.  Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures , 1997 .

[20]  Carlo Sirtori,et al.  Quantum cascade laser: A new optical source in the mid-infrared , 1995 .