Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

[1]  M. Hiramoto,et al.  Bandgap Science for Organic Solar Cells , 2014 .

[2]  P. Kim,et al.  Graphene nanoribbon devices at high bias , 2014, Nano Convergence.

[3]  Takhee Lee,et al.  The application of orthogonal photolithography to micro-scale organic field effect transistors and complementary inverters on flexible substrate , 2014 .

[4]  Z. Bao,et al.  High Mobility N‐Type Transistors Based on Solution‐Sheared Doped 6,13‐Bis(triisopropylsilylethynyl)pentacene Thin Films , 2013, Advanced materials.

[5]  Kenjiro Fukuda,et al.  Strain sensitivity and durability in p-type and n-type organic thin-film transistors with printed silver electrodes , 2013, Scientific Reports.

[6]  F. Yakuphanoglu,et al.  Hybrid photodiodes based on 6,13-bis(triisopropylsilylethynyl) pentacene:poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene]/p-silicon , 2013 .

[7]  Se Hyun Kim,et al.  Electrolyte‐Gated Transistors for Organic and Printed Electronics , 2013, Advanced materials.

[8]  Lianmao Peng,et al.  Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. , 2013, Nanoscale.

[9]  M. Fuhrer,et al.  Thin-film barristor: A gate-tunable vertical graphene-pentacene device , 2013, 1302.2711.

[10]  K. Novoselov,et al.  A roadmap for graphene , 2012, Nature.

[11]  Jong-Hyun Ahn,et al.  Coplanar-gate transparent graphene transistors and inverters on plastic. , 2012, ACS nano.

[12]  P. Kolandaivel,et al.  A theoretical study of structural and electronic properties of pentacene/Al(100) interface. , 2012, Journal of molecular graphics & modelling.

[13]  S. Hotta,et al.  Ambipolar Organic Single‐Crystal Transistors Based on Ion Gels , 2012, Advanced materials.

[14]  Lain-Jong Li,et al.  Highly flexible MoS2 thin-film transistors with ion gel dielectrics. , 2012, Nano letters.

[15]  Kinam Kim,et al.  Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier , 2012, Science.

[16]  Wenjuan Zhu,et al.  Three-terminal graphene negative differential resistance devices. , 2012, ACS nano.

[17]  Jong-Hyun Ahn,et al.  High-performance graphene-based transparent flexible heaters. , 2011, Nano letters.

[18]  H. Bechtel,et al.  Graphene plasmonics for tunable terahertz metamaterials. , 2011, Nature nanotechnology.

[19]  G. Fiori,et al.  Negative Differential Resistance in Mono and Bilayer Graphene p-n Junctions , 2011, IEEE Electron Device Letters.

[20]  Alán Aspuru-Guzik,et al.  From computational discovery to experimental characterization of a high hole mobility organic crystal , 2011, Nature communications.

[21]  B. Appleton,et al.  Tuning Schottky diodes at the many-layer-graphene/ semiconductor interface by doping , 2011 .

[22]  Steven G. Louie,et al.  Controlling inelastic light scattering quantum pathways in graphene , 2011, Nature.

[23]  Cherie R Kagan,et al.  Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors , 2010, Advanced materials.

[24]  Xiao Hu,et al.  A pentacene field-effect transistor with light-programmable threshold voltage , 2010 .

[25]  J. Myoung,et al.  Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric , 2010 .

[26]  Jong-Hyun Ahn,et al.  High-performance flexible graphene field effect transistors with ion gel gate dielectrics. , 2010, Nano letters.

[27]  P. Ruden,et al.  Carrier localization on surfaces of organic semiconductors gated with electrolytes. , 2010, Physical review letters.

[28]  Unyong Jeong,et al.  Periodic array of polyelectrolyte-gated organic transistors from electrospun poly(3-hexylthiophene) nanofibers. , 2010, Nano letters.

[29]  H. Sirringhaus,et al.  Ambipolar Transport in Organic Conjugated Materials , 2007 .

[30]  Richard H. Friend,et al.  General observation of n-type field-effect behaviour in organic semiconductors , 2005, Nature.

[31]  Steven G. Louie,et al.  Ab initio calculation of the electronic and optical properties of solid pentacene , 2003 .

[32]  Wei Wang,et al.  The fracture of brittle thin films on compliant substrates in flexible displays , 2002 .

[33]  F. Schwierz.  Graphene transistors. , 2010, Nature nanotechnology.