Extremely low-threshold 1.3 μm GaInAsP/InP DFB PPIBH laser
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Extremely low-threshold-current 1.3 mu m GaInAsP/InP distributed feedback, p-substrate partially inverted buried heterostructure lasers have been fabricated by the MOCVD/LPE hybrid process. A CW threshold of 3.1 mA is achieved at room temperature. A side mode suppression ratio of more than 35 dB is obtained above 1 mW light output level.
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