5 nm gate length Nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
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Ming Zhu | N. Balasubramanian | G.S. Samudra | Yee Chia Yeo | Tsung Yang Liow | Kian Ming Tan | R. Lee | B.L.-H. Tan
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