Road to Vmin=0.4V LSIs with least-variability FDSOI and back-bias control

• Ultralow-power CMOS should be operated under E min condition in principle. • Compromise between E and speed is done with adaptive V dd and V b control. • Reducing RDF variability and back-bias control is a key requirement for ULV-operation CMOS. SOTB is the suitable device structure for this purpose. • From ULP application viewpoint, ULP wireless communication and power source are crucial issues as well as ULV LSIs. • “Perpetuum Mobile” microcomputer awaits vast new application field.