Driver circuit of semiconductor memory device for decreasing leakage current

A driver circuit of a semiconductor memory device for decreasing a leakage current is provided to reduce the intensity of a GIDL current in a standby mode, by decreasing the level of a voltage supplied in the standby mode to be lower than the level of a voltage supplied in an active mode. According to a driver circuit of a semiconductor memory device, a first driver circuit generates a first driving signal based on a first row address signal in response to a mode control signal. A second driver circuit includes a first transistor having a first port receiving the first driving signal and a second port, and generates a second driving signal on the basis of the first driving signal and a second row address signal. The first driver circuit drives the first driving signal with a first power supply voltage or a second power supply voltage in a first mode, and drives the first driving signal with a third power supply voltage in a second mode. The third power supply voltage is lower than the first power supply voltage and is higher than the second power supply voltage.