论文信息 - Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

An analytic model of the direct tunneling current in metal–oxide–semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used.

Kevin J. Yang | L. Register | E. Rosenbaum

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