论文信息 - Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices

Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices

An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results.

T. Ma | A. Melik-Martirosian

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