The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices

The properties of oxide-based resistive switching ReRAM devices depend critically on the thickness of the different layers of the device stack. Here we focus on the variation of the pristine resistance and the forming voltage with the thickness of the reactive oxygen exchange electrode layer. By means of electrical capacitance and X-ray photoelectron spectroscopy characterization, we show how this variation of the pristine properties is linked to the formation of (sub)stoichiometric oxide layers at the metal oxide/oxygen exchange layer interface. This insight provides guidelines for further device optimization