Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

High quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 eV, suggesting the Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface. This makes the Ge/In0.53Ga0.47As heterojunction a promising tunneling junction for application in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped p+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. The temperature dependence of the TFET transfer characteristics was investigated. The TFET with gate length (LG) of 8 μm exhibits an on-state tunneling current (ION) of 380 nA/μm at VGS = VDS = 2 V. The subthreshold swing (S) at the steepest part of the transfer characteristics of this device is ∼177 mV/decade. It was found that the off-state lea...

[1]  J.C.S. Woo,et al.  The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor , 2008, IEEE Transactions on Electron Devices.

[2]  James S. Harris,et al.  Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy , 2011 .

[3]  Yee-Chia Yeo,et al.  Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate , 2011 .

[4]  K. Kao,et al.  Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs , 2012, IEEE Transactions on Electron Devices.

[5]  M. Konagai,et al.  Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy , 2009 .

[6]  J. Waldrop,et al.  Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy , 1996 .

[7]  Xiao Gong,et al.  A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs , 2012 .

[8]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[9]  S. Das,et al.  Broken-Gap Tunnel MOSFET: A Constant-Slope Sub-60-mV/decade Transistor , 2011, IEEE Electron Device Letters.

[10]  Eugene A. Fitzgerald,et al.  Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition , 2008 .

[11]  Tzu-Ying Lin,et al.  Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure , 2006 .

[12]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[13]  Isabelle Sagnes,et al.  High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition , 2011 .

[14]  R. Dalby,et al.  Ge diffusion at Ge/GaAs heterojunctions , 1984 .

[15]  Heike Riel,et al.  Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes. , 2011, Nano letters.

[16]  Huili Grace Xing,et al.  InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field , 2012 .

[17]  E. Kane.  Zener tunneling in semiconductors , 1960 .

[18]  J. Knoch,et al.  Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs , 2010, IEEE Electron Device Letters.

[19]  Yee-Chia Yeo,et al.  Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications , 2008 .

[20]  Youngki Yoon,et al.  Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance , 2010 .

[21]  D. A. Antoniadis,et al.  Strained-Si 1-xGex / Si Band-to-Band Tunneling Transistors : Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior , 2009 .

[22]  Qin Zhang,et al.  Low-subthreshold-swing tunnel transistors , 2006, IEEE Electron Device Letters.

[23]  H. Yoshida,et al.  Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate , 1992 .

[24]  Y. Chen,et al.  $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide , 2010, IEEE Electron Device Letters.

[25]  Kain Lu Low,et al.  Simulation of tunneling field-effect transistors with extended source structures , 2012 .

[26]  J. Appenzeller,et al.  Band-to-band tunneling in carbon nanotube field-effect transistors. , 2004, Physical review letters.

[27]  E. A. Kraut,et al.  Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials , 1980 .

[28]  M. Perego,et al.  Energy band alignment of HfO2 on Ge , 2006 .

[29]  F. Zhou,et al.  InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides , 2011, IEEE Transactions on Electron Devices.

[30]  K. Maex,et al.  Tunnel field-effect transistor without gate-drain overlap , 2007 .

[31]  Mats-Erik Pistol,et al.  InAs/GaSb heterostructure nanowires for tunnel field-effect transistors. , 2010, Nano letters.

[32]  Naresh Chand,et al.  Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics , 1986 .

[33]  Yue Yang,et al.  Tunneling Field-Effect Transistor: Capacitance Components and Modeling , 2010, IEEE Electron Device Letters.

[34]  K. Boucart,et al.  Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric , 2007, IEEE Transactions on Electron Devices.

[35]  E. A. Kraut,et al.  Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy , 1983 .

[36]  C. Ong,et al.  Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system , 2004 .

[37]  Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices , 2010 .

[38]  S. Sedlmaier,et al.  Vertical tunnel field-effect transistor , 2004, IEEE Transactions on Electron Devices.

[39]  V. D'costa,et al.  Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100) , 2007 .

[40]  M. Jo,et al.  Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films , 1998 .

[41]  Y. Yeo,et al.  Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current , 2009, IEEE Electron Device Letters.

[42]  David J. Roulston,et al.  A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers , 1991 .

[43]  Elena Plis,et al.  Ultrathin body InAs tunneling field-effect transistors on Si substrates , 2011 .