Multi-bit MONOS nonvolatile memory based on double-gate technology

A multi-bits/cell double gate oxide-nitride-oxide nonvolatile memory is proposed and demonstrated by numerical device simulation. The operational mechanisms including read, program, erase and inhibit in an array structure are studied in detail. This multi-bit storage capability per single cell is very suitable for high density NVM application. With a slight modification, the proposed structure can achieve double program/read rate by programming/reading 2 bits of the memory cell simultaneously.