论文信息 - High-reliability InGaP/GaAs HBTs with 153 GHz f/sub T/ and

High-reliability InGaP/GaAs HBTs with 153 GHz f/sub T/ and

High-reliability high-performance InGaP/GaAs hetero-junction bipolar transistors (HBTs) are described. A novel layer structure, ion implantation into the external collector region, and an emitter-surrounding ledge overlaid by base metal enhance both performance and reliability. High values of fT and fmax both greater than 150 GHz are attained with a long MTTF of 1011 h at a junction temperature of 125°C under severe bias conditions.

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