Towards artificial neurons and synapses: a materials point of view
暂无分享,去创建一个
Doo Seok Jeong | Inho Kim | Hermann Kohlstedt | Martin Ziegler | D. Jeong | M. Ziegler | H. Kohlstedt | Inho Kim
[1] Wei Lu,et al. Short-term Memory to Long-term Memory Transition in a Nanoscale Memristor , 2022 .
[2] Shimeng Yu,et al. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation , 2011, IEEE Transactions on Electron Devices.
[3] Y. Jan,et al. Sequence of a probable potassium channel component encoded at Shaker locus of Drosophila. , 1987, Science.
[4] M. Wuttig,et al. Phase-change materials for rewriteable data storage. , 2007, Nature materials.
[5] R. Nicoll,et al. NMDA-receptor-dependent synaptic plasticity: multiple forms and mechanisms , 1993, Trends in Neurosciences.
[6] L.O. Chua,et al. Memristive devices and systems , 1976, Proceedings of the IEEE.
[7] Jong-Ho Lee,et al. Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory , 2012 .
[8] T. Teyler,et al. Two forms of long-term potentiation in area CA1 activate different signal transduction cascades. , 1996, Journal of neurophysiology.
[9] Yuriy V. Pershin,et al. Memory effects in complex materials and nanoscale systems , 2010, 1011.3053.
[10] B. Diény,et al. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions , 2009 .
[11] David C. Gadsby,et al. Ion channels versus ion pumps: the principal difference, in principle , 2009, Nature Reviews Molecular Cell Biology.
[12] E. Bienenstock,et al. Theory for the development of neuron selectivity: orientation specificity and binocular interaction in visual cortex , 1982, The Journal of neuroscience : the official journal of the Society for Neuroscience.
[13] R. Waser,et al. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere , 2008 .
[14] P. Krzysteczko,et al. Memristive switching of MgO based magnetic tunnel junctions , 2009, 0907.3684.
[15] A. Hodgkin,et al. Action Potentials Recorded from Inside a Nerve Fibre , 1939, Nature.
[16] Doo Seok Jeong,et al. Threshold resistive and capacitive switching behavior in binary amorphous GeSe , 2012 .
[17] Ho Won Jang,et al. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. , 2009, Nano letters.
[18] T. Morie,et al. Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks , 2012 .
[19] Roberto Malinow,et al. Learning Mechanisms: The Case for CaM-KII , 1997, Science.
[20] Yuichi Kanaoka,et al. Primary structure of Electrophorus electricus sodium channel deduced from cDNA sequence , 1984, Nature.
[21] Howard C. Card,et al. Silicon models of associative learning in Aplysia , 1990, Neural Networks.
[22] J. Yang,et al. Direct Identification of the Conducting Channels in a Functioning Memristive Device , 2010, Advanced materials.
[23] M. Kozicki,et al. Electrochemical metallization cells—blending nanoionics into nanoelectronics? , 2012 .
[24] Adam Z. Stieg,et al. Neuromorphic Atomic Switch Networks , 2012, PloS one.
[25] J. Nowak,et al. High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions , 2009 .
[26] Jimeng Sun,et al. Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells , 2009 .
[27] J. Yang,et al. Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.
[28] T. Hasegawa,et al. Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch , 2011 .
[29] James F. Scott,et al. Formation of magnetite in bismuth ferrrite under voltage stressing , 2007 .
[30] D. Querlioz,et al. Visual Pattern Extraction Using Energy-Efficient “2-PCM Synapse” Neuromorphic Architecture , 2012, IEEE Transactions on Electron Devices.
[31] Paul E. Hasler,et al. Floating Gate Synapses With Spike-Time-Dependent Plasticity , 2011, IEEE Transactions on Biomedical Circuits and Systems.
[32] J. Slonczewski. Current-driven excitation of magnetic multilayers , 1996 .
[33] Rainer Waser,et al. Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors , 2008 .
[34] Ralph,et al. Current-induced switching of domains in magnetic multilayer devices , 1999, Science.
[35] Jong-Ho Lee,et al. Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments , 2011 .
[36] Bruce H. Mahan. Microscopic reversibility and detailed balance. An analysis , 1975 .
[37] J. Lisman. The CaM kinase II hypothesis for the storage of synaptic memory , 1994, Trends in Neurosciences.
[38] Julie Grollier,et al. Solid-state memories based on ferroelectric tunnel junctions. , 2012, Nature nanotechnology.
[39] R. Waser,et al. TiO2—a prototypical memristive material , 2011, Nanotechnology.
[40] Germany,et al. Theoretical current-voltage characteristics of ferroelectric tunnel junctions , 2005, cond-mat/0503546.
[41] J. C. Phillips,et al. Stretched exponential relaxation in molecular and electronic glasses , 1996 .
[42] F. Bezanilla,et al. Voltage-gated ion channels , 2005, IEEE Transactions on NanoBioscience.
[43] E. Oja. Simplified neuron model as a principal component analyzer , 1982, Journal of mathematical biology.
[44] J. H. Coombs,et al. Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth , 1995 .
[45] Xing Hua Li,et al. Memristors: Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor (Adv. Funct. Mater. 13/2012) , 2012 .
[46] T. Hasegawa,et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. , 2011, Nature materials.
[47] Robert M. May,et al. The ecology of the ecological literature , 1976, Nature.
[48] R. Douglas,et al. A silicon neuron , 1991, Nature.
[49] D. Jeong,et al. Emerging memories: resistive switching mechanisms and current status , 2012, Reports on progress in physics. Physical Society.
[50] M. Bear,et al. Homosynaptic long-term depression in area CA1 of hippocampus and effects of N-methyl-D-aspartate receptor blockade. , 1992, Proceedings of the National Academy of Sciences of the United States of America.
[51] Theodore Leng,et al. The Artificial Synapse Chip: a flexible retinal interface based on directed retinal cell growth and neurotransmitter stimulation. , 2003, Artificial organs.
[52] J. Lisman,et al. A mechanism for the Hebb and the anti-Hebb processes underlying learning and memory. , 1989, Proceedings of the National Academy of Sciences of the United States of America.
[53] E. Kandel,et al. Prospectuses of Neurobiology. (Book Reviews: From Neuron to Brain. A Cellular Approach to the Function of the Nervous System; The Cellular Basis of Behavior. An Introduction to Behavioral Neurobiology) , 1976 .
[54] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[55] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[56] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[57] Kyoobin Lee,et al. Synaptic behaviors of a single metal–oxide–metal resistive device , 2011 .
[58] L. Chua. Memristor-The missing circuit element , 1971 .
[59] H. Ishiwara,et al. An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films , 1999, IEEE Electron Device Letters.
[60] J. Bass,et al. Excitation of a magnetic multilayer by an electric current , 1998 .
[61] James F. Scott,et al. Domain wall nanoelectronics , 2012 .
[62] M. Ziegler,et al. An Electronic Version of Pavlov's Dog , 2012 .
[63] Joseph E. LeDoux,et al. LTP is accompanied by commensurate enhancement of auditory-evoked responses in a fear conditioning circuit , 1995, Neuron.
[64] D. E. Goldman. POTENTIAL, IMPEDANCE, AND RECTIFICATION IN MEMBRANES , 1943, The Journal of general physiology.
[65] H. Hwang,et al. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device , 2011, Nanotechnology.
[66] R. Waser,et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.
[67] Junichi Akita,et al. Pulse number control of electrical resistance for multi-level storage based on phase change , 2007 .
[68] Rainer Waser,et al. Nanoelectronics and Information Technology , 2012 .
[69] Giacomo Indiveri,et al. Artificial Cognitive Systems: From VLSI Networks of Spiking Neurons to Neuromorphic Cognition , 2009, Cognitive Computation.
[70] V. Weidenhof,et al. Minimum time for laser induced amorphization of Ge2Sb2Te5 films , 2000 .
[71] Gert Cauwenberghs,et al. Neuromorphic Silicon Neuron Circuits , 2011, Front. Neurosci.
[72] M. Berggren,et al. Electronic control of Ca2+ signalling in neuronal cells using an organic electronic ion pump. , 2007, Nature materials.
[73] Carver Mead,et al. Analog VLSI and neural systems , 1989 .
[74] Massimiliano Di Ventra,et al. Experimental demonstration of associative memory with memristive neural networks , 2009, Neural Networks.
[75] Siddharth Gaba,et al. Synaptic behaviors and modeling of a metal oxide memristive device , 2011 .
[76] Zhiyong Li,et al. Ionic/Electronic Hybrid Materials Integrated in a Synaptic Transistor with Signal Processing and Learning Functions , 2010, Advanced materials.
[77] H. Ishiwara. Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights , 1993 .
[78] D. Stewart,et al. The missing memristor found , 2008, Nature.
[79] Amy Wenzel,et al. One hundred years of forgetting: A quantitative description of retention , 1996 .
[80] M. Kozicki,et al. Electrochemical metallization memories—fundamentals, applications, prospects , 2011, Nanotechnology.
[81] M. Bear,et al. A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity , 2011, Proceedings of the National Academy of Sciences.
[82] O. Cueto,et al. Physical aspects of low power synapses based on phase change memory devices , 2012 .
[83] Edwin Jager,et al. Translating Electronic Currents to Precise Acetylcholine–Induced Neuronal Signaling Using an Organic Electrophoretic Delivery Device , 2009 .
[84] Kōji Kobayashi,et al. Computers and Communications , 1985 .
[85] Berger. Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.
[86] Hermann Kohlstedt,et al. Tunneling Across a Ferroelectric , 2006, Science.
[87] S. Ha,et al. Adaptive oxide electronics: A review , 2011 .
[88] M. Blumenkranz,et al. Localized chemical release from an artificial synapse chip. , 2004, Proceedings of the National Academy of Sciences of the United States of America.
[89] A. Hodgkin,et al. A quantitative description of membrane current and its application to conduction and excitation in nerve , 1952, The Journal of physiology.
[90] Carver A. Mead,et al. Neuromorphic electronic systems , 1990, Proc. IEEE.
[91] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[92] S. Levinson,et al. Purification of the tetrodotoxin-binding component associated with the voltage-sensitive sodium channel from Electrophorus electricus electroplax membranes. , 1978, Proceedings of the National Academy of Sciences of the United States of America.
[93] Sir Nevill Mott,et al. The mechanism of threshold switching in amorphous alloys , 1978 .
[94] Hai Helen Li,et al. Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion , 2009, IEEE Electron Device Letters.
[95] F. A. Kröger,et al. Relations between the Concentrations of Imperfections in Crystalline Solids , 1956 .
[96] Lawrence T. Clark,et al. Ferroelectric thin-film memory for electrically programmable IC neural networks , 1991 .
[97] X. Lou,et al. Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films. , 2006, Physical review letters.
[98] A. Thomas,et al. The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse‐Neuron System , 2012, Advanced materials.
[99] R. Waser,et al. Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .
[100] Joseph Classen,et al. L-Type Voltage-Gated Ca2+ Channels: A Single Molecular Switch for Long-Term Potentiation/Long-Term Depression-Like Plasticity and Activity-Dependent Metaplasticity in Humans , 2010, The Journal of Neuroscience.
[101] J. F. Scott,et al. Phase Separation of Bismuth Ferrite into Magnetite under Voltage Stressing , 2007 .
[102] G. Bi,et al. Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type , 1998, The Journal of Neuroscience.
[103] J. Grollier,et al. A ferroelectric memristor. , 2012, Nature materials.
[104] R. Nicoll,et al. Long-term potentiation--a decade of progress? , 1999, Science.
[105] J Astrup,et al. Oxygen and glucose consumption related to Na+-K+ transport in canine brain. , 1981, Stroke.
[106] C. Toyoshima,et al. Crystal structure of the sodium–potassium pump at 2.4 Å resolution , 2009, Nature.