A 270 GHz push-push oscillator in InP-DHBT-on-BiCMOS technology

A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8μm emitter InP-DHBTs. The InP DHBT-on-BiCMOS offers both InP HBT and BiCMOS technologies but in this case only the InP part is used. The transistors exhibit a maximum oscillation frequency fmax of 300 GHz. The oscillator delivers -9.5 dBm output power. DC consumption is only 31 mW from a 1.8 volts power supply, which corresponds to 0.4 % overall DC-to-RF efficiency.

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