论文信息 - AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

Al/sub 0.27/Ga/sub 0.73/N/GaN HEMTs have been realised on resistive Si(111) substrates. The epitaxial structure was grown by MBE yielding a channel mobility of 1440 cm/sup 2//Vs (room temperature) and a sheet carrier density of 9.6e12 cm/sup -2/. Large signal evaluation of transistors with gate length of 0.25 /spl mu/m and gate width of 2/spl times/125 /spl mu/m yields up to 1.65 W CW output power at 2 GHz corresponding to a power density of 6.6 W/mm. These results are thought to represent the highest output power density so far achieved for GaN-based HEMTs on silicon substrates.

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