Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

In this work, the ferroelectric characteristics of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT) thin films grown on 0.7 wt. % Nb-doped (001)-SrTiO3 (Nb:STO) single-crystal have been investigated. High-resolution transmission electron microscopy and electron energy loss spectroscopy revealed a very sharp Nb:STO/BCZT interface, while selected area electron diffraction revealed the epitaxial growth of the BCZT layer on the Nb:STO substrate. The ferroelectric nature of the BCZT films have been investigated by piezoresponse force microscopy and hysteresis loops. The effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function. The local field variation was found to decrease with the increase in the electric field, and thus, the switching process becomes faster. The peak value of the polarization current and the logarithmic characteristic switching time exhibited an exponential dependence on the inverse of electric field. This model gave an excellent agreement with the experimental polarization reversal transients throughout the whole time range.In this work, the ferroelectric characteristics of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT) thin films grown on 0.7 wt. % Nb-doped (001)-SrTiO3 (Nb:STO) single-crystal have been investigated. High-resolution transmission electron microscopy and electron energy loss spectroscopy revealed a very sharp Nb:STO/BCZT interface, while selected area electron diffraction revealed the epitaxial growth of the BCZT layer on the Nb:STO substrate. The ferroelectric nature of the BCZT films have been investigated by piezoresponse force microscopy and hysteresis loops. The effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function. The local field variation was found to decrease with the increase in the electric field, and thus, the switching process becomes faster. The peak value of the polarization current and the logarithmic characteristic switching time exhibited an exponential dependen...

[1]  J. P. B. Silva,et al.  Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers. , 2018, ACS applied materials & interfaces.

[2]  Rahul Vaish,et al.  BaTiO3-based piezoelectrics: Fundamentals, current status, and perspectives , 2017 .

[3]  Y. Noguchi,et al.  Gap-state engineering of visible-light-active ferroelectrics for photovoltaic applications , 2017, Nature Communications.

[4]  A. Almeida,et al.  Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer , 2017, Scientific Reports.

[5]  Gertjan Koster,et al.  Multistability in Bistable Ferroelectric Materials toward Adaptive Applications , 2016 .

[6]  J. P. B. Silva,et al.  Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 thin films , 2016 .

[7]  G. Rijnders,et al.  Tunable and stable in time ferroelectric imprint through polarization coupling , 2016 .

[8]  J. Wan,et al.  Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures , 2016, Scientific Reports.

[9]  I. Ivanov,et al.  Interface and thickness dependent domain switching and stability in Mg doped lithium niobate , 2015 .

[10]  J. P. B. Silva,et al.  Ferroelectric phase transitions studies in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics , 2015, Journal of Electroceramics.

[11]  Soon-Gil Yoon,et al.  Microstructural and electrical properties of lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) epitaxial films grown on Si (0 0 1) substrates , 2015 .

[12]  Venkata Sreenivas Puli,et al.  Nanoscale polarisation switching and leakage currents in (Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 epitaxial thin films , 2015 .

[13]  Kyle G. Webber,et al.  Transferring lead-free piezoelectric ceramics into application , 2015 .

[14]  Danyang Wang,et al.  Composition dependence of ferroelectric and piezoelectric properties of epitaxial (1 − x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 thin films prepared by pulsed laser deposition , 2015 .

[15]  A. Grishin,et al.  Large piezoelectric coefficient and ferroelectric nanodomain switching in Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin films , 2014 .

[16]  Shengtao Li,et al.  Orientation-dependent piezoelectric properties in lead-free epitaxial 0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 thin films , 2013 .

[17]  J. A. Moreira,et al.  Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition , 2012 .

[18]  M. Gomes,et al.  Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films , 2012 .

[19]  Haijun Wu,et al.  Microstructure basis for strong piezoelectricity in Pb-free Ba(Zr0.2Ti0.8)O3-(Ba0.7Ca0.3)TiO3 ceramics , 2011 .

[20]  R. Nath,et al.  Analysis of ferroelectric polarization switching in (NH4)0.39K0.61NO3 films using nucleation limited switching model , 2010 .

[21]  L. Martin,et al.  Switching kinetics in epitaxial BiFeO3 thin films , 2010 .

[22]  X. Ren,et al.  Large piezoelectric effect in Pb-free ceramics. , 2009, Physical review letters.

[23]  R. Nath,et al.  Polarization reversal behavior of spray deposited sodium nitrite:poly(vinyl alcohol) composite films , 2009 .

[24]  W. Li,et al.  Investigation on switching kinetics in epitaxial Pb(Zr0.2Ti0.8)O3 ferroelectric thin films: Role of the 90° domain walls , 2007 .

[25]  Sergei V. Kalinin,et al.  Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface , 2007, Proceedings of the National Academy of Sciences.

[26]  A. Rappe,et al.  Nucleation and growth mechanism of ferroelectric domain-wall motion , 2007, Nature.

[27]  T. Noh,et al.  Domain switching kinetics in disordered ferroelectric thin films. , 2007, Physical review letters.

[28]  A. Tagantsev,et al.  Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films , 2002 .

[29]  R. Waser,et al.  Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films , 2001 .

[30]  James F. Scott,et al.  Switching kinetics of lead zirconate titanate submicron thin‐film memories , 1988 .

[31]  Philip W. Anderson,et al.  Spectral Diffusion Decay in Spin Resonance Experiments , 1962 .

[32]  H. Wieder Activation Field and Coercivity of Ferroelectric Barium Titanate , 1957 .

[33]  J. H. Van Vleck,et al.  The Dipolar Broadening of Magnetic Resonance Lines in Crystals , 1948 .

[34]  A. Gruverman Polarization Behavior in Thin Film Ferroelectric Capacitors at the Nanoscale , 2010 .

[35]  I. Yoo TESTING AND CHARACTERIZATION OF FERROELECTRIC THIN FILM CAPACITORS , 2004 .