Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

Abstract Closely stacked Stranski-Krastanow (SK) growth islands were investigated. InAs islands of nominal 1.8 monolayer thickness were grown periodically with GaAs intermediate layers of less than 3 nm by molecular beam epitaxy. Reflection high-energy electron diffraction and atomic force microscopy revealed that SK growth islands were formed even with stacked intervals of 2 nm, but the upper island size expanded slightly as the number of stacked layers increased. Transmission electron microscopy revealed that upper islands grew closely just on the lower islands aligning vertically on the first layer islands. Drastic decrease in photoluminescence full-width at half-maximum less than 30 meV was obtained from this structure.

[1]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .

[2]  M. Lagally,et al.  Self-organization in growth of quantum dot superlattices. , 1996, Physical review letters.

[3]  A. Madhukar,et al.  Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100) , 1990 .

[4]  G. Bastard,et al.  Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. , 1994, Physical review letters.

[5]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[6]  J. M. Moison,et al.  Self‐organized growth of regular nanometer‐scale InAs dots on GaAs , 1994 .

[7]  Harris,et al.  Vertically aligned and electronically coupled growth induced InAs islands in GaAs. , 1996, Physical review letters.

[8]  Eaglesham,et al.  Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.

[9]  Nikolai N. Ledentsov,et al.  InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties , 1996 .

[10]  S. Muto,et al.  Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy , 1995 .

[11]  S. Denbaars,et al.  Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .

[12]  Davis,et al.  Morphological instability in epitaxially strained dislocation-free solid films. , 1991, Physical review letters.