论文信息 - An improved substrate‐loss model to determine MOSFET drain, source and substrate elements

An improved substrate‐loss model to determine MOSFET drain, source and substrate elements

An improved model to account for the substrate-loss effects in RF-MOSFETs, which includes its associated parameter extraction, is presented in this paper. This model considers the source-to-bulk capacitance, which allows the proper modeling of MOSFETs output admittance at high frequencies, thus obtaining an excellent agreement between simulated and experimental data up to 21 GHz. The proposed model also allows the determination of the source and drain resistances at a given gate bias, independent of frequency. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 126–130, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20397

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