An l-band SiGe HBT inductorless Colpitts VCO using parasitic reactance of lumped elements for higher frequency oscillation

A new inductorless Colpitts VCO is presented. In place of a traditional LC-resonator, it employs an inductorless resonator and includes the parasitic reactance of chip capacitors in the design of the resonator to achieve a high cutoff frequency. The implemented inductorless Colpitts VCO has achieved a tuning frequency from 1.46 to 1.69GHz, an output power greater than −15.2dBm, a consumed power less than 14.2mW and phase noise at 100kHz offset in an range from −108 to −101dBc/Hz.

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