On the post-injection voltage decay of p-s-n rectifiers at high injection levels
暂无分享，去创建一个
[1] S. C. Choo,et al. Open circuit voltage decay behavior of junction devices , 1970 .
[2] J. Burtscher. Die messung von volumenströmen an siliziumgleichrichtern. Eine neue methode zur ausschaltung der oberflächeneinflüsse , 1969 .
[3] R. J. Bassett,et al. Observations on a method of determining the carrier lifetime in p+-ν-n+ diodes , 1969 .
[4] H. Schlangenotto,et al. On the effective carrier lifetime in p-s-n rectifiers at high injection levels , 1969 .
[5] E. Spenke,et al. Notes on the theory of the forward characteristic of power rectifiers , 1968 .
[6] A. Herlet. The forward characteristic of silicon power rectifiers at high current densities , 1968 .
[7] P. G. Wilson. Recombination in silicon p−π−n diodes , 1967 .
[8] L. W. Davies. Electron-Hole Scattering at High Injection-Levels in Germanium , 1962, Nature.
[9] J. Maserjian,et al. Semiconductor Properties of Recrystallized Silicon in Aluminum Alloy Junction Diodes , 1957 .
[10] B. R. Gossick,et al. On the Transient Behavior of Semiconductor Rectifiers , 1955 .
[11] Wilhelm Magnus,et al. Formeln und Sätze für die Speziellen Funktionen der Mathematischen Physik , 1948 .
[12] Y. Shechtman,et al. Transients in pulsed semiconductor diodes , 1968 .