Superconducting properties of three series of amorphous WxSi1−x films with different thickness and
stoichiometry were investigated by dc transport measurements in a magnetic field up to 9 T. These amorphous
WxSi1−x films were deposited by magnetron cosputtering of the elemental source targets onto silicon substrates
at room temperature and patterned in the form of bridges by optical lithography and reactive ion etching.
Analysis of the data on magnetoconductivity allowed us to extract the critical temperatures, superconducting
coherence lengths, magnetic penetration depths, and diffusion constants of electrons in the normal state as
functions of film thickness for each stoichiometry. Two basic time constants were derived from transport and
time-resolving measurements. A dynamic process of the formation of a hotspot was analyzed in the framework
of a diffusion-based vortex-entry model. We used a two-stage diffusion approach and defined a hotspot size by
assuming that the quasiparticles and normal-state electrons have the same diffusion constant.With this definition
and these measured material parameters, the hotspot in the 5-nm-thickW0.85Si0.15 film had a diameter of 107 nm
at the peak of the number of nonequilibrium quasiparticles.