140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

This paper presents a high gain, medium power amplifier for D band application based on 0.5 μm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75GHz and at 140GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140GHz with DC power consumption 250mW.

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