Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm
暂无分享,去创建一个
M. Kamp | A. Forchel | J. Harris | S. Bank | M. Wistey | H. Yuen | L. Goddard | D. Gollub | J. Seufert
[1] J.S. Harris,et al. Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs , 2004, IEEE Journal of Quantum Electronics.
[2] M. Kamp,et al. GaInNAs-based distributed feedback laser diodes emitting at 1.5 /spl mu/m , 2004 .
[3] A. Forchel,et al. 1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes , 2003 .
[4] M. Kamp,et al. 1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes , 2002 .
[5] A. Forchel,et al. Towards high performance GaInAsN/GaAsN laser diodes in 1.5 /spl mu/m range , 2002 .
[6] S. G. Spruytte,et al. Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy , 2001 .
[7] M. Fischer,et al. GaInAsN/GaAs laser diodes operating at 1.52 µm , 2000 .
[8] Johann Peter Reithmaier,et al. Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers , 1999 .