SiGe BiCMOS X-Band integrated radiometer

The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.

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