A SiGe HBT BiCMOS technology for mixed signal RF applications

We present results of IBM's Silicon Germanium HBT 0.35 /spl mu/m L/sub eff/ BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (f/sub t/, f/sub max/). These results demonstrate the potential of designing analog/mixed signal applications with "system-on-a-chip" functionality.

[1]  M. Soyuer,et al.  A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[2]  S. Voinigescu,et al.  SiGe HBT technology: device and application issues , 1995, Proceedings of International Electron Devices Meeting.

[4]  D.L. Harame,et al.  Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace , 1996, International Electron Devices Meeting. Technical Digest.