Temperature dependence of the energy gap in semiconductors
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[1] H. Y. Fan. Temperature Dependence of the Energy Gap in Semiconductors , 1951 .
[2] W. J. Choyke,et al. EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC , 1962 .
[3] J. R. Dixon,et al. Optical Properties ofn-Type Indium Arsenide in the Fundamental Absorption Edge Region , 1961 .
[4] D. G. Thomas,et al. Intrinsic Absorption-Edge Spectrum of Gallium Phosphide , 1966 .
[5] J. Launay. Debye Characteristic Temperature at 0K of Certain Cubic Crystals , 1956 .
[6] G. D. Pettit,et al. Exciton Absorption and Emission in InP , 1964 .
[7] E. F. Steigmeier. THE DEBYE TEMPERATURES OF III‐V COMPOUNDS , 1963 .
[8] E. Adams. Vasileff's Calculation of Electronic Self-Energy in Semiconductors , 1957 .
[9] R. Rompe,et al. Über den Einfluß der Wärmedehnung auf das Absorptionsspektrum von Isolatoren , 1942 .
[10] E. Antončík. On the theory of temperature shift of the absorption curve in non-polar crystals , 1955 .
[11] J. Bardeen,et al. Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .
[12] H. Y. Fan. Temperature Dependence of the Energy Gap in Monatomic Semiconductors , 1950 .
[13] H. C. Casey,et al. Temperature Dependence of the Energy Gap in GaAs and GaP , 1969 .
[14] J. A. Morrison,et al. The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra , 1959 .
[15] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .