The formations of TiNx0y/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 as well as p+/n shallow junction using doped silicide technique have been studied. Results of the chemical stability of TiNx0v/TiSi7/Si in dilute HF, the effectiveness of TiNx0, on TiSi2 as a diffusion barrier Mr Al boron diffusion in Si02/TiSi,2/Si structure, the surface dopant concentration at the TiSi7/Si interface, and the junction quality are presented. It is found that TiNx0y/TiSi2 bilayer has good chemical stability in dilute HF for 60 sec and acts as an effeentive contact barrier between Al and Si substrate up to 500°C, 30 min. Shallow p±n junction with high boron concentration at the TiSO/Si interface has been formed. P-1-/n diodes and p-channel LDD MOSFETs fabricated using this technology show good I-V characteristics with a reverse leakage current on the order of 10-9A/cm.