Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

Metallization of Schottky surface gates by sputtering Au on strained Si∕SiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto Si∕SiGe without the need of a wetting layer.Metallization of Schottky surface gates by sputtering Au on strained Si∕SiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto Si∕SiGe without the need of a wetting layer.

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