Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs’ alignment along the patterns.

[1]  Tomonori Ishikawa,et al.  Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy , 1998 .

[2]  Pallab Bhattacharya,et al.  Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers , 1999 .

[3]  Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope , 1999, Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.

[4]  Leonard,et al.  Critical layer thickness for self-assembled InAs islands on GaAs. , 1994, Physical review. B, Condensed matter.

[5]  John Alexander,et al.  Nanometer-scale lithography using the atomic force microscope , 1992 .

[6]  Nikolai N. Ledentsov,et al.  Quantum dot heterostructures , 1999 .

[7]  K. Matsumoto.  STM/AFM nano-oxidation process to room-temperature-operated single-electron transistor and other devices , 1997, Proc. IEEE.

[8]  J. Oshinowo,et al.  In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition , 1995 .

[9]  So,et al.  Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy , 1996 .

[10]  E. Snow,et al.  Nanofabrication with proximal probes , 1996, Proc. IEEE.

[11]  G. Solomon,et al.  EFFECTS OF MONOLAYER COVERAGE, FLUX RATIO, AND GROWTH RATE ON THE ISLAND DENSITY OF INAS ISLANDS ON GAAS , 1995 .

[12]  K. Asakawa,et al.  Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography , 2000 .

[13]  M. Kasu,et al.  Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale , 1997 .

[14]  Eun Kyu Kim,et al.  Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope , 1999 .

[15]  Tomonori Ishikawa,et al.  Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography , 1999 .

[16]  Hyongsok T. Soh,et al.  Fabrication of 0.1 um metal oxide semiconductor field-effect transistors with the atomic force microscope , 1995 .