InGaN Solar Cells: Present State of the Art and Important Challenges
暂无分享,去创建一个
Akio Yamamoto | Ashraful Ghani Bhuiyan | Akihiro Hashimoto | A. Yamamoto | K. Sugita | A. Hashimoto | A. G. Bhuiyan | Kenichi Sugita
[1] Ray-Hua Horng,et al. High-quality InGaN∕GaN heterojunctions and their photovoltaic effects , 2008 .
[2] Jonathan J. Wierer,et al. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices , 2010 .
[3] Ray-Hua Horng,et al. Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells , 2009, IEEE Electron Device Letters.
[4] Baoping Zhang,et al. Fabrication and characterization of InGaN p-i-n homojunction solar cell , 2009 .
[5] Ilesanmi Adesida,et al. Characterization of Pd/Ni/Au ohmic contacts on p-GaN , 2005 .
[6] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .
[7] S. M. Durbin,et al. Buried p-type layers in Mg-doped InN , 2006 .
[8] W. Walukiewicz,et al. Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[9] Seong Jun Park,et al. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment , 1999 .
[10] H. Amano,et al. p‐type conduction in Mg‐doped Ga0.91In0.09N grown by metalorganic vapor‐phase epitaxy , 1995 .
[11] S. Kurtz,et al. Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
[12] Motoaki Iwaya,et al. Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate , 2010 .
[13] A. Yoshikawa,et al. Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy , 2005 .
[14] Yoichi Kawakami,et al. Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra , 2008 .
[15] Martin A. Green,et al. Prospects for photovoltaic efficiency enhancement using low-dimensional structures , 2000 .
[16] D. Starikov,et al. Fabrication and characterization of 2.3eV InGaN photovoltaic devices , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[17] W. Walukiewicz,et al. Modeling of InGaN/Si tandem solar cells , 2008 .
[18] Motoaki Iwaya,et al. GaInN‐based solar cells using GaInN/GaInN superlattices , 2011 .
[19] Jinn-Kong Sheu,et al. Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers , 2010 .
[20] Baoping Zhang,et al. Favourable photovoltaic effects in InGaN pin homojunction solar cell , 2009 .
[21] A. Zettl,et al. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires , 2004 .
[22] R. J. Shul,et al. GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .
[23] Tai-Yuan Lin,et al. Direct evidence of nanocluster-induced luminescence in InGaN epifilms , 2005 .
[24] W. Schaff,et al. Electrical properties of InGaN‐Si heterojunctions , 2009 .
[25] Fong Kwong Yam,et al. InGaN: An overview of the growth kinetics, physical properties and emission mechanisms , 2008 .
[26] Chih-Chung Yang,et al. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells , 2000 .
[27] Z. Q. Li,et al. Effects of polarization charge on the photovoltaic properties of InGaN solar cells , 2011 .
[28] Takeshi Kuboyama,et al. Properties of Ga1-xInxN Films Prepared by MOVPE , 1989 .
[29] Jr-Hau He,et al. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells , 2010 .
[30] Ian Ferguson,et al. Optimization of GaN window layer for InGaN solar cells using polarization effect , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[31] Lester F. Eastman,et al. Growth, fabrication, and characterization of InGaN solar cells , 2008 .
[32] Antonio Luque,et al. Entropy production in photovoltaic conversion , 1997 .
[33] K. Kumakura,et al. High Room-Temperature Hole Concentrations above 10 19 cm −3 in Mg-Doped InGaN/GaN Superlattices , 2000 .
[34] Ian T. Ferguson,et al. EFFECT OF PHASE SEPARATION ON PERFORMANCE OF III-V NITRIDE SOLAR CELLS , 2007 .
[35] James S. Speck,et al. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy , 2011 .
[36] Xiaodong Wang,et al. Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities , 2007 .
[37] Eugene E. Haller,et al. Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system , 2003 .
[38] L. J. Chen,et al. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films , 1999 .
[39] Takashi Matsuoka,et al. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy , 1991 .
[40] The Basic Physics and Design of III-V Multijunction Solar Cells , 2002 .
[41] High efficiency InAlN-based solar cells , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[42] K. H. Chen,et al. Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates , 2002 .
[43] Wladek Walukiewicz,et al. Finite element simulations of compositionally graded InGaN solar cells , 2010 .
[44] Hyun-Jin Kim,et al. Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition , 2004 .
[45] M. Willander,et al. III–nitrides: Growth, characterization, and properties , 2000 .
[46] Hadis Morkoç,et al. Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices , 1994 .
[47] Cheul‐Ro Lee,et al. Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures , 2010 .
[48] M. Mehta. Modifying PC1D to model spontaneous & piezoelectric polarization in III-V nitride solar cells , 2008 .
[49] Hai Lu,et al. Electrical properties of InGaN grown by molecular beam epitaxy , 2008 .
[50] Md. Rafiqul Islam,et al. Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells , 2010 .
[51] Robert W. Martin,et al. Origin of Luminescence from InGaN Diodes , 1999 .
[52] A. Yamamoto,et al. MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content , 2011 .
[53] Oliver Ambacher,et al. Growth and applications of Group III-nitrides , 1998 .
[54] Wladek Walukiewicz,et al. Demonstration of a III–Nitride/Silicon Tandem Solar Cell , 2009 .
[55] Charles Howard Henry,et al. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells , 1980 .
[56] Keith W. J. Barnham,et al. A new approach to high‐efficiency multi‐band‐gap solar cells , 1990 .
[57] Suski,et al. Towards the identification of the dominant donor in GaN. , 1995, Physical review letters.
[58] E. Haller,et al. Evidence for p-type doping of InN. , 2005, Physical review letters.
[59] Xiaodong Wang,et al. Growth and properties of Mg-doped In-polar InN films , 2007 .
[60] K. Kumakura,et al. Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2) , 2000 .
[61] Jinn-Kong Sheu,et al. Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers , 2009, IEEE Electron Device Letters.
[62] Jing Li,et al. InGaN/GaN multiple quantum well concentrator solar cells , 2010 .
[63] K. Kumakura,et al. Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature , 2000 .
[64] James S. Speck,et al. High internal and external quantum efficiency InGaN/GaN solar cells , 2011 .
[65] Seong-Ran Jeon,et al. InGaN-Based p–i–n Solar Cells with Graphene Electrodes , 2011 .
[66] V. V. Emtsev,et al. Acceptor states in the photoluminescence spectra of n-InN , 2005 .
[67] Macho Anani,et al. High-grade efficiency III-nitrides semiconductor solar cell , 2009, Microelectron. J..
[68] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[69] M. Islam,et al. Mg-doping and n+-p junction formation in MOVPE-grown InxGa1-xN (x∼0.4) , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[70] V. R. Reddy,et al. Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN , 2005 .
[71] T. Johansson,et al. World Energy Assessment Overview: 2004 Update , 2004 .
[72] Rajendra Dahal,et al. InGaN/GaN multiple quantum well solar cells with long operating wavelengths , 2009 .
[73] Liann-Be Chang,et al. Temperature dependences of InxGa1−xN multiple quantum well solar cells , 2009 .
[74] Yang Cui-bai,et al. Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell , 2011 .
[75] Jinmin Li,et al. Theoretical design and performance of InxGa1−xN two-junction solar cells , 2008 .
[76] Jinmin Li,et al. Simulation of In0.65Ga0.35 N single-junction solar cell , 2007 .
[77] W. Schaff,et al. Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements , 2008 .
[78] A. Nozik. Quantum dot solar cells , 2002 .
[79] Taeil Kim,et al. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment , 1998 .
[80] W. Alan Doolittle,et al. Effect of III‐nitride polarization on VOC in p–i–n and MQW solar cells , 2011 .
[81] Colin J. Humphreys,et al. Misfit dislocations in In‐rich InGaN/GaN quantum well structures , 2006 .
[82] Wladek Walukiewicz,et al. Photovoltaic action from InxGa1‐xN p‐n junctions with x > 0.2 grown on silicon , 2011 .
[83] Jinmin Li,et al. Photovoltaic effects in InGaN structures with p–n junctions , 2007 .
[84] Umesh K. Mishra,et al. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap , 2008 .
[85] Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide , 2007 .
[86] Z. Mi,et al. InN p-i-n Nanowire Solar Cells on Si , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[87] Fernando Ponce,et al. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence , 2001 .
[88] Motoaki Iwaya,et al. GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate , 2011 .
[89] Hongxing Jiang,et al. Mg acceptor level in InN epilayers probed by photoluminescence , 2007 .
[90] E. Yablonovitch,et al. Limiting efficiency of silicon solar cells , 1984, IEEE Transactions on Electron Devices.
[91] Wladek Walukiewicz,et al. Optical properties and electronic structure of InN and In-rich group III-nitride alloys , 2004 .
[92] David Holec,et al. Equilibrium critical thickness for misfit dislocations in III-nitrides , 2008 .
[93] Min-Hung Lee,et al. Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate , 2011 .
[94] W. Schaff,et al. Effects of surface states on electrical characteristics of InN andIn1−xGaxN , 2007 .
[95] S. Ruffenach,et al. Indium nitride quantum dots grown by metalorganic vapor phase epitaxy , 2003 .
[96] X. Hou,et al. An investigation on InxGa1−xN/GaN multiple quantum well solar cells , 2011 .
[97] R. Kudrawiec,et al. Growth and characterization of ingan for photovoltaic devices , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.
[98] Martin A. Green,et al. Solar cell efficiency tables (Version 38) , 2011 .
[99] P. H. Jefferson,et al. Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range , 2007 .
[100] A. P. Zhang,et al. Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices , 2001 .
[101] Naoki Kobayashi,et al. Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer , 2001 .
[102] T. L. Williamson,et al. InGaN/Si heterojunction tandem solar cells , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[103] Prashant V. Kamat,et al. Quantum Dot Solar Cells. Semiconductor Nanocrystals as Light Harvesters , 2008 .
[104] H. Lüth,et al. MBE growth optimization of InN nanowires , 2006 .
[105] K. Kumakura,et al. High hole concentrations in Mg-doped InGaN grown by MOVPE , 2000 .
[106] Chia-Lung Tsai,et al. Substrate-free large gap InGaN solar cells with bottom reflector , 2010 .
[107] Seong Jun Park,et al. Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN , 1999 .
[108] Xiaodong Wang,et al. Hole mobility in Mg-doped p-type InN films , 2008 .
[109] S. Kurtz,et al. Characterization and analysis of InGaN photovoltaic devices , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
[110] Akio Yamamoto,et al. MOVPE growth of high quality p-type InGaN with intermediate In compositions , 2011 .
[111] Chin-An Chang,et al. Magnesium Doping of In-rich InGaN , 2007 .
[112] Han Cheng Lee,et al. Study of Electrical Characteristics of GaN-Based Photovoltaics With Graded In$_{x}$ Ga$_{1-{x}}$ N Absorption Layer , 2011, IEEE Photonics Technology Letters.
[113] Akio Yamamoto,et al. Indium nitride (InN): A review on growth, characterization, and properties , 2003 .
[114] Ian T. Ferguson,et al. Design and characterization of GaN∕InGaN solar cells , 2007 .
[115] M. Jamil,et al. Design and Realization of Wide-Band-Gap ($\sim$ 2.67 eV) InGaN p-n Junction Solar Cell , 2010, IEEE Electron Device Letters.
[116] Hadis Morkoç,et al. Progress and prospects of group-III nitride semiconductors , 1996 .
[117] Alexandros Georgakilas,et al. InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy , 2006 .
[118] Vincent R. Gray. Climate Change 2007: The Physical Science Basis Summary for Policymakers , 2007 .
[119] Ahmed S. Bouazzi,et al. Theoretical possibilities of InxGa1-xN tandem PV structures , 2005 .
[120] Junqiao Wu,et al. When group-III nitrides go infrared: New properties and perspectives , 2009 .
[121] Bor Wen Liou,et al. Design and fabrication of InxGa1-xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates , 2011 .
[122] Gerald B. Stringfellow,et al. Solid phase immiscibility in GaInN , 1996 .
[123] B. Gil,et al. Growth of InN quantum dots by MOVPE , 2005 .