论文信息 - Energy dependent electron and hole impact ionization in Si bipolar transistors

Energy dependent electron and hole impact ionization in Si bipolar transistors

This paper describes a self-consistent procedure to extract energy dependent electron (/spl alpha/) and hole (/spl beta/) ionization coefficients directly from electrical measurements of multiplication factors (M/sub n/ and M/sub p/, respectively) carried out on a single reversed junction in a bipolar device. The extracted /spl alpha/ and /spl beta/ coefficients are used to accurately calculate breakdown voltages in a variety of bipolar devices. Results point out the role of holes and of non-local hole heating on the avalanche characteristics of modern bipolar devices.

[1] E. Zanoni,et al. Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal , 1993, IEEE Electron Device Letters.

[2] Paolo Pavan,et al. New method for extracting collector series resistance of bipolar transistors , 1993 .

[3] W. Maes,et al. Impact ionization in silicon: A review and update , 1990 .

[4] J. Frey,et al. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's , 1982, IEEE Transactions on Electron Devices.

[5] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .

[6] N. Goldsman,et al. Efficient and accurate use of the energy transport method in device simulation , 1988 .

[7] A. Tasch,et al. A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's , 1996 .

[8] A. Tasch,et al. A full-band Monte Carlo model for hole transport in silicon , 1997 .

[9] P. Pavan,et al. Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor , 1993 .

[10] R. V. Overstraeten,et al. Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .