A new method in characterizing the nonlinear current model of MESFETs using single-tone excitation
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This paper presents a novel technique for extracting the two-dimensional Taylor series coefficients of a MESFET. Unknown coefficients are determined from harmonic power measurement using a single-tone excitation. The FET is operated in a quasi-common-gate configuration which allow coefficients to be extracted with enhanced accuracy. For comparison, coefficients obtained by the proposed method and a two-tone approach are given.
[1] J. J. Bussgang,et al. Analysis of nonlinear systems with multiple inputs , 1974 .
[2] Jose C. Pedro,et al. Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model , 1994 .
[3] Anthony E. Parker,et al. New model extraction for predicting distortion in HEMT and MESFET circuits , 1999 .
[4] S. A. Maas,et al. Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysis , 1989 .