Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone).

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe2) by poly(vinylpyrrolidone) (PVP) coating. The major carrier type of the PVP-coated WSe2-based field-effect transistor (FET) was converted from hole (p-type) to electron (n-type). Furthermore, the vacancy-induced interface trap density was reduced by approximately 500 times. This study provides a practical doping and passivation method for the van der Waals materials, as well as a comprehensive understanding of the chemical reaction and electronic transport in these materials.

[1]  J. Hone,et al.  Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant , 2021, ACS Applied Electronic Materials.

[2]  Xiaohan Wang,et al.  Electronic Modulation of Non‐van der Waals 2D Electrocatalysts for Efficient Energy Conversion , 2021, Advanced materials.

[3]  M. S. Jeong,et al.  Carrier transport through near-ideal interface for WSe2 van der Waals homojunction diode , 2021 .

[4]  Sang‐Woo Kim,et al.  Piezoionic-powered graphene strain sensor based on solid polymer electrolyte , 2021 .

[5]  I. Efeoglu,et al.  Structure and adhesion properties of TiNi/MoS2 coatings , 2021 .

[6]  Xuguang Liu,et al.  Graphene/α-tellurene van der Waals heterobilayers: Interlayer coupling and gate-tunable carrier type and Schottky barriers , 2020 .

[7]  V. Perebeinos,et al.  Trion induced photoluminescence of a doped MoS2 monolayer. , 2020, The Journal of chemical physics.

[8]  Jong‐Min Lee,et al.  Design Strategies for Development of TMD-Based Heterostructures in Electrochemical Energy Systems , 2020 .

[9]  Joydev K. Laha,et al.  Aroylation of Electron-Rich Pyrroles under Minisci Reaction Conditions. , 2020, Organic letters.

[10]  P. Hu,et al.  Performance Improvement of Multilayered SnS2 Field Effect Transistors through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA , 2019, ACS Applied Electronic Materials.

[11]  K. Novoselov,et al.  Magnetic 2D materials and heterostructures , 2019, Nature Nanotechnology.

[12]  Yu Huang,et al.  Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions , 2018, Nature.

[13]  P. Hyldgaard,et al.  Understanding noninvasive charge transfer doping of graphene: a comparative study , 2018, Journal of Materials Science: Materials in Electronics.

[14]  Michael Neumann,et al.  Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy , 2017, Nature Communications.

[15]  Steven B. Fairchild,et al.  Field emission from carbon nanotube fibers in varying anode-cathode gap with the consideration of contact resistance , 2017 .

[16]  K. Ellmer,et al.  Highly (001)-textured p-type WSe2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen Evolution , 2017, Scientific Reports.

[17]  C. Hwang,et al.  Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment , 2017 .

[18]  Yanqing Wu,et al.  Multifunctional high-performance van der Waals heterostructures. , 2017, Nature nanotechnology.

[19]  P. Ajayan,et al.  Re Doping in 2D Transition Metal Dichalcogenides as a New Route to Tailor Structural Phases and Induced Magnetism , 2017, Advanced materials.

[20]  D. Chi,et al.  Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric , 2017, Scientific Reports.

[21]  Hyoung Won Baac,et al.  Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors , 2016 .

[22]  Gautam Gupta,et al.  Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer , 2016, Scientific Reports.

[23]  Kaustav Banerjee,et al.  Electrical contacts to two-dimensional semiconductors. , 2015, Nature materials.

[24]  K. Siegmann,et al.  A moisture-absorbing and abrasion-resistant transparent coating on polystyrene , 2015, Journal of Coatings Technology and Research.

[25]  Sefaattin Tongay,et al.  Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. , 2014, Nano letters.

[26]  Jinlan Wang,et al.  Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering , 2014, Nature Communications.

[27]  A. Javey,et al.  Air-stable surface charge transfer doping of MoS₂ by benzyl viologen. , 2014, Journal of the American Chemical Society.

[28]  Chenyang Xue,et al.  Fabrication of polyimide sacrificial layers with inclined sidewalls based on reactive ion etching , 2014 .

[29]  P. Ajayan,et al.  Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry. , 2014, Nano letters.

[30]  Likai Li,et al.  Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.

[31]  X. Lou,et al.  Defect‐Rich MoS2 Ultrathin Nanosheets with Additional Active Edge Sites for Enhanced Electrocatalytic Hydrogen Evolution , 2013, Advanced materials.

[32]  Yuhei Miyauchi,et al.  Tunable photoluminescence of monolayer MoS₂ via chemical doping. , 2013, Nano letters.

[33]  M. Fuhrer,et al.  Measurement of mobility in dual-gated MoS₂ transistors. , 2013, Nature nanotechnology.

[34]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[35]  R. Bates,et al.  Synthesis of the stenine ring system from pyrrole. , 2011, The Journal of organic chemistry.

[36]  S. Ciraci,et al.  Functionalization of Single-Layer MoS2 Honeycomb Structures , 2010, 1009.5527.