Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

[1]  M. R. Uddin,et al.  A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory , 2013, Nature Communications.

[2]  Hosang Lee,et al.  Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes , 2013, Advanced materials.

[3]  Tomoji Kawai,et al.  Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides , 2013, Scientific Reports.

[4]  Jan van den Hurk,et al.  Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.

[5]  Jea-Gun Park,et al.  Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks , 2012 .

[6]  B. Park,et al.  Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films , 2012 .

[7]  Zhi-Min Liao,et al.  Memory and threshold resistance switching in Ni/NiO core-shell nanowires. , 2011, Nano letters.

[8]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[9]  Tomoji Kawai,et al.  Intrinsic mechanisms of memristive switching. , 2011, Nano letters.

[10]  H. Hwang,et al.  Three‐Dimensional Integration of Organic Resistive Memory Devices , 2010, Advanced materials.

[11]  R. Ruoff,et al.  Graphene oxide thin films for flexible nonvolatile memory applications. , 2010, Nano letters.

[12]  Florian Kronast,et al.  Reversible resistive switching and multilevel recording in La0.7Sr0.3MnO3 thin films for low cost nonvolatile memories. , 2010, Nano letters.

[13]  B. Kang,et al.  Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure , 2010 .

[14]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[15]  C. N. Lau,et al.  The mechanism of electroforming of metal oxide memristive switches , 2009, Nanotechnology.

[16]  R. Williams,et al.  Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .

[17]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[18]  Sunae Seo,et al.  Observation of electric-field induced Ni filament channels in polycrystalline NiOx film , 2007 .

[19]  Young-soo Park,et al.  Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .

[20]  S. Seo,et al.  Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control , 2007 .

[21]  T. Claeson,et al.  Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface , 2007 .

[22]  S. O. Park,et al.  Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .

[23]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[24]  H. Ohno,et al.  Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO , 2004 .

[25]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[26]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[27]  R. McLean,et al.  Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering , 2003 .

[28]  B. S. Kang,et al.  Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.

[29]  Z. Hu,et al.  Compressibility, Phase Transitions, and Oxygen Migration in Zirconium Tungstate, ZrW2O8 , 1997, Science.

[30]  Chen,et al.  Single-phase 60-K bulk superconductor in annealed Ba2YCu , 1987, Physical review. B, Condensed matter.

[31]  J. Varley,et al.  Type of Ion Migration in a Metal/Metal Oxide System , 1957, Nature.

[32]  H. Sirringhaus,et al.  Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. , 2011, Nature materials.

[33]  Michael Grätzel,et al.  Photoelectrochemical cells , 2001, Nature.

[34]  M. Grätzel.  Photoelectrochemical cells : Materials for clean energy , 2001 .