The structure of Mo/Si multilayers prepared in the conditions of ionic assistance

The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to -200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over -200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.

[1]  H. Wadley,et al.  Atomistic simulations of the vapor deposition of Ni/Cu/Ni multilayers: The effects of adatom incident energy , 1998 .

[2]  Hans M. Hertz,et al.  Recent advances in ion-assisted growth of Cr/Sc multilayer X-ray mirrors for the water window , 2002 .

[3]  N. Ceglio,et al.  High‐resolution electron microscopy study of x‐ray multilayer structures , 1987 .

[4]  N. Ceglio,et al.  Thermally induced structural modification of Mo‐Si multilayers , 1990 .

[5]  S. Bajt,et al.  Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers , 2001 .

[6]  David L. Windt,et al.  Stress, microstructure, and stability of Mo/Si, W/Si, and Mo/C multilayer films , 2000 .

[7]  R S Rosen,et al.  Ion-assisted sputter deposition of molybdenum-silicon multilayers. , 1993, Applied optics.

[8]  R. Sinclair,et al.  Interfacial reactions on annealing molybdenum‐silicon multilayers , 1989 .

[9]  V. Rigato,et al.  Ion bombardment effects on nucleation of sputtered Mo nano-crystals in Mo/B4C/Si multilayers , 2006 .

[10]  Torsten Feigl,et al.  Damage Resistant and Low Stress EUV Multilayer Mirrors , 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).

[11]  D. Stearns,et al.  Optimization of Growth Conditions of Vapor Deposited Mo/Si Multilayers , 1992, Physics of X-Ray Multilayer Structures.

[12]  David L. Windt,et al.  Interface imperfections in metal/Si multilayers , 1992 .

[13]  Interface engineering of short-period Ni/V multilayer X-ray mirrors , 2006 .

[14]  Jr. Troy W. Barbee.  Multilayers for x-ray optics , 1986 .

[15]  R. Somekh.  The thermalization of energetic atoms during the sputtering process , 1984 .

[16]  V. V. Kondratenko,et al.  Interlayer transition zones in Mo/Si superlattices , 2002 .