Mid-infrared InSb and InAlSb diode lasers

Diode lasers with an In/sub 0.948/Al/sub 0.052/Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9 /spl mu/m at 77 K, with the threshold current density being 140 A cm/sup -2/ and maximum operating temperature 165 K. The latter had a stimulated emission wavelength of 3.6 /spl mu/m at 77 K, with the threshold current density being 417 A cm/sup -2/ and maximum operating temperature 160 K.

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