Ultrashallow profiling of semiconductors by secondary ion mass spectrometry
暂无分享,去创建一个
[1] Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source , 2000 .
[2] F. Priolo,et al. Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument , 2000 .
[3] F. Priolo,et al. Microscopical aspects of boron diffusion in ultralow energy implanted silicon , 1999 .
[4] Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing , 1999 .
[5] A. Picariello,et al. Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon , 1999 .
[6] P. Alkemade,et al. The surface transient in Si for SIMS with oblique low‐energy O2+ beams , 1999 .
[7] T. E. Haynes,et al. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon , 1997 .
[8] W. D. Boer,et al. Secondary ion mass spectroscopy resolution with ultra-low beam energies , 1996 .
[9] P. Zalm. Ultra shallow doping profiling with SIMS , 1995 .
[10] M. Seah,et al. Ion and neutral spectroscopy , 1992 .
[11] A. Benninghoven,et al. Secondary ion mass spectrometry : SIMS V : proceedings of the fifth international conference, Washington, DC, September 30-October 4, 1985 , 1986 .