论文信息 - First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM - 字舞流文

First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

T. Endoh | S. Ikeda | S. Miura | H. Honjo | M. Yasuhira | T. Watanabe | H. Inoue | T. Nasuno | Y. Noguchi | H. Naganuma | T. V. A. Nguyen | K. Nishioka