Test and Reliability: Partners in IC Manufacturing, Part 2
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Jaume Segura | Charles F. Hawkins | Jerry M. Soden | Ted Dellin | C. Hawkins | J. Soden | T. Dellin | J. Segura
[1] Prasad Chaparala,et al. Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/ , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.
[2] C. Gabriel. Curbing plasma-induced gate oxide damage , 1999 .
[3] D. Fleetwood. Fast and slow border traps in MOS devices , 1995 .
[4] F. G. Yost,et al. Materials reliability issues in microelectronics , 1991 .
[5] A. Suyko,et al. Development of a burn-in time reduction algorithm using the principles of acceleration factors , 1991, 29th Annual Proceedings Reliability Physics 1991.
[6] D. G. Pierce,et al. Electromigration: A review , 1997 .
[7] Víctor H. Champac,et al. Quiescent current analysis and experimentation of defective CMOS circuits , 1992, J. Electron. Test..
[8] Wayne M. Needham,et al. High volume microprocessor test escapes, an analysis of defects our tests are missing , 1998, Proceedings International Test Conference 1998 (IEEE Cat. No.98CH36270).
[9] Charvaka Duvvury,et al. Trends for deep submicron VLSI and their implications for reliability , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.
[10] Antonio Rubio,et al. A detailed analysis of GOS defects in MOS transistors: testing implications at circuit level , 1995, Proceedings of 1995 IEEE International Test Conference (ITC).
[11] J.W. McPherson,et al. Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).
[12] H. Gamble,et al. Surface electromigration in copper interconnects , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
[13] I. Eisele,et al. Influence of soft breakdown on NMOSFET device characteristics , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
[14] Paul S. Ho,et al. Stress-induced phenomena in metallization , 1994 .