论文信息 - Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors - 字舞流文

Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors

M. Kocan | G. Umana-Membreno | F. Recht | U. Mishra | G. Parish | B. Nener | M. Kilburn