A 10µW standby power 256K CMOS SRAM

This paper will report on a 55ns 256K CMOS SRAM that utilizes optimized poly load resistors, buried isolation and Ti polycide to achieve 10μW standby power in a 40.7mm2die.

[1]  T. Masuhara,et al.  A 20ns 64K CMOS SRAM , 1984, 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.