论文信息 - Tunable Y laser with reactive ion etched mirror facets suitable for integration

Tunable Y laser with reactive ion etched mirror facets suitable for integration

The tunable Y laser is realised for the first time in an integratable form featuring dry etched facets. Reactive ion etching with a CH/sub 4H/sub 2CO/sub 2/ gas mixture is successfully applied for the mirror formation. First devices with asymmetrically dry etched branches exhibit a low cw threshold current of 4/spl times/18 mA and a wide tuning range of 15.6 nm using "single knob" tuning by only one tuning current.<<ETX>>

Gert Laube | Eugen Lach | Michael Schilling | K. Daub

[1] W. Idler,et al. 6 THz range tunable 2.5 Gb/s frequency conversion by a multiquantum well Y laser , 1993 .

[2] C. Burrus,et al. Widely tunable (45 nm, 5.6 THz) multi-quantum-well three-branch Y3-lasers for WDM networks , 1993, IEEE Photonics Technology Letters.

[3] C. Burrus,et al. Asymmetric Y-branch tunable semiconductor laser with 1.0 THz tuning range , 1992, IEEE Photonics Technology Letters.

[5] Gert Laube,et al. Asymmetrical Y laser with simple single current tuning response , 1992 .

[6] W. Idler,et al. 10 Gbit/s DFB laser/monitor PICs for low cost high speed laser modules , 1993 .