An amplifier-doubler chain with conversion gain improvement techniques

: This paper presents an ampli fi er-douler chain to double the signal frequency from 21 GHz to 42 GHz with about 10 GHz bandwidth of output frequency. For the improvement of conversion gain, the doubler adopts the fully di ff erential Gilbert structure which provides large bandwidth and high conversion gain. Meanwhile, an inductive series LC network is used to form resonant tank with the parasitic capacitance to suppress the second harmonic of input frequency, hence the conversion gain of doubler is improved. Once again, the RLC parallel resonant network is employed as load of doubler and power ampli fi er, and it can improve bandwidth and conversion gain, too. What ’ s more, transformer matching networks (TMN) are adopted to optimize the bandwidth and conversion gain of ampli fi er-douler chain. Finally, the ampli fi er-douler chain which fabricated by IBM SiGe 0.13 µm BiCMOS technology shows 6.1 dB conversion gain and − 4.1 dBm saturation output power with 26.5 mA operating current and 2.8 V supply voltage, and the fundamental and 3rd harmonic rejection at 42 GHz are 17.5 dB and 38.6 dB, respectively.

[1]  Tsung-Yu Yang,et al.  A 25–75 GHz Miniature Double Balanced Frequency Doubler in 0.18-$\mu$m CMOS Technology , 2008, IEEE Microwave and Wireless Components Letters.

[2]  Yan Zhao,et al.  A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology , 2013, IEEE Journal of Solid-State Circuits.

[3]  Kuo-Liang Deng,et al.  A miniature broad-band pHEMT MMIC balanced distributed doubler , 2003 .

[4]  F. Ellinger,et al.  Ultracompact SOI CMOS frequency doubler for low power applications at 26.5-28.5 GHz , 2004, IEEE Microwave and Wireless Components Letters.

[5]  Gabriel M. Rebeiz,et al.  High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers , 2005, IEEE Transactions on Microwave Theory and Techniques.

[6]  Gabriel M. Rebeiz,et al.  $W$ -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS , 2012, IEEE Transactions on Microwave Theory and Techniques.

[7]  E Öjefors,et al.  Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology , 2011, IEEE Transactions on Microwave Theory and Techniques.

[8]  E. Afshari,et al.  A Scalable THz 2 D Phased Array with + 17 dBm of EIRP at 338 GHz in 65 nm Bulk CMOS , 2013 .

[9]  Sriram Muralidharan,et al.  A 165–230GHz SiGe amplifier-doubler chain with 5dBm peak output power , 2016, 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[10]  J. Bock,et al.  42 GHz active frequency doubler in SiGe bipolar technology , 2002, 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..

[11]  F. Gruson,et al.  A frequency doubler with high conversion gain and good fundamental suppression , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).