Roles of dopants, interstitial O2 and temperature in the effects of irradiation on silica-based optical fibers

In this Thesis work we have investigated the effect of ionizing irradiation (X and γ rays) up to 1 Grad on different types of multimode optical fibers (P-doped, P-Ce-doped , Ge-doped, Ge-F-doped, Ge-Ce-doped, and N-doped). The experiments were carried out by three main experimental techniques: online Radiation Induced Attenuation (RIA), Electron Paramagnetic Resonance (EPR) and Confocal Micro-Luminescence (CML). In the first part of the Thesis work we report on the radiation response of several types of optical fibers. The absorption due to radiation induced P-related defects was studied by RIA in the UV-Visible domain. Moreover, by EPR measurements we were able to detect POHC, P1 and P2 defects. In particular, for the detection of P1 and P2 defects we have validated the use of EPR second-harmonic detection mode which allowed us to obtain the growth kinetics of P1 and P2 with the dose. The effects due to the variation of the drawing conditions of the fibers were investigated as well as the ones due to the change of the temperature of irradiation (from 25 to 280 °C). Finally, concerning the P-doped OFs, we report on the effects due to the Cerium codoping of the core of the optical fiber. We observed a reduced generation of POHC and P2 centers under irradiation. However, EPR investigation has shown that the generation of P1 defects is essentially unaffected by the Ce-codoping. Regarding Ge-doped optical fibers we report on three basic typologies: Ge-doped, Ge-F-doped and Ge-Ce-doped. For each fiber typology we investigated three drawing conditions. The radiation responses of these fibers were characterized by RIA and EPR measurements. Furthermore, performing CML measurements we were able to obtain further insight on the role of the co-dopants and of the defect precursors in determining the radiation induced defects. We have also investigated the radiation response of N-doped OFs (three drawing conditions). The radiation responses in the UV-Visible domains were obtained by RIA, and by EPR measurements we were able to detect the signals of two N-related defects at high radiation doses. Finally, CML measurements on irradiated samples have shown three emission bands in the visible domain which are tentatively assigned to N-related centers. In the second part of the Thesis we report on the effects of an O2 loading treatment produces on some of the investigated samples. By micro-Raman measurements we demonstrate that a high pressure high temperature treatment can incorporate high quantity of O2 into Pure-Silica-Core (PSC), F, Ge and P doped optical fibers. The radiation responses of some of the O2-loaded optical fibers were investigated with particular regard to the fluorine doped and pure-silica-core optical fibers. On the basis of literature data we performed band decompositions of the RIA spectra as a function of the dose. Moreover, the EPR study of the O2 loaded P-doped optical fiber have shown a strong reduction of the signals associated to the P1 and P2 defects as compared to the untreated fibers. In this part of the thesis we also report on the characterization of the near infrared radioluminescence (1272 nm) of O2 molecules embedded in the optical fiber matrix and the feasibility of a radiation sensor based on this phenomenon for environments characterized by high radiation doses and high dose-rates