Deep energy levels in CdTe and CdZnTe

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed.

[1]  David A. Stevenson,et al.  Electrical Transport and Photoelectronic Properties of ZnTe:Al Crystals , 1972 .

[2]  K. Benz,et al.  Structural properties of defects in Cd1−xZnxTe , 1993 .

[3]  Klaus-Werner Benz,et al.  Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors , 1994 .

[4]  B. Fraboni,et al.  Comparison of electrical and luminescence data for the A center in CdTe , 1996 .

[5]  P. Siffert,et al.  About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride , 1987 .

[6]  J. Franc,et al.  Defect equilibrium in semi-insulating CdTe(Cl) , 1992 .

[7]  O. Yoshie,et al.  Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. I. Computer Controlled Multi-Channel PICTS System with High-Resolution , 1983 .

[8]  T. Sawada,et al.  Doping Induced Defects of Cd1−xZnxTe Grown from Te Solution , 1995 .

[9]  J. Allen.  Spectroscopy of lattice defects in tetrahedral II-VI compounds , 1995 .

[10]  David D. Allred,et al.  Photoconductive characterization of ZnxCd1−xTe (0≤x≤0.25) single crystal alloys , 1990 .

[11]  Miyoko O. Watanabe,et al.  On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy , 1982 .

[12]  N. V. Agrinskaya,et al.  Fermi level pinning in the middle of the band gap in CdTe: Cl crystals: Role of deep localized states , 1989 .

[13]  J. P. Zielinger,et al.  Photoinduced current transient spectroscopy in high‐resistivity bulk materials: Instrumentation and methodology , 1988 .

[14]  Meyer,et al.  Optical investigations of defects in Cd1-xZnxTe. , 1995, Physical review. B, Condensed matter.

[15]  Peter Blood,et al.  The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , 1992 .

[16]  J. Weese,et al.  Investigation of compensation defects in CdTe:Cl samples grown by different techniques , 1993 .

[17]  P. Siffert,et al.  Properties of electroless gold contacts on p-type cadmium telluride , 1983 .

[18]  A. J. Strauss,et al.  The physical properties of cadmium telluride , 1977 .

[19]  P. Siffert,et al.  Status of semi-insulating cadmium telluride for nuclear radiation detectors , 1992 .

[20]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[21]  U. Pal,et al.  Study of defects in CdTe: Cl by cathodoluminescence microscopy , 1995 .

[22]  Meyer,et al.  Identification of the chlorine A center in CdTe. , 1992, Physical review. B, Condensed matter.

[23]  Paul Siffert,et al.  Deep levels in semi-insulating CdTe , 1993 .

[24]  Cavallini,et al.  Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn0.2Te. , 1996, Physical review. B, Condensed matter.

[25]  Patricia M. Mooney,et al.  Photo‐deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors , 1983 .

[26]  U. Pal,et al.  Cathodoluminescence characterization of Ge‐doped CdTe crystals , 1995 .

[27]  Hiroyuki Matsunami,et al.  Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties , 1982 .

[28]  E. Molva,et al.  Acceptor states in CdTe and comparison with ZnTe. General trends , 1984 .

[29]  C. Ye,et al.  Studies of defects in n‐type CdTe by charge transient spectroscopy , 1990 .