chapter 1 III-V Ferromagnetic Semiconductors
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[1] A. Oiwa,et al. Interlayer coupling in (In,Mn)As/InAs/(In,Mn)As magnetic semiconductor trilayer structures , 2002 .
[2] A. Oiwa,et al. Preparation of ferromagnetic (In,Mn)As with relatively low hole concentration and Curie temperature 50 K , 2002 .
[3] R. Moriya,et al. Preparation of quaternary magnetic alloy semiconductor epilayers (Ga, Mn, Fe)As , 2002 .
[4] H. Ohno,et al. Growth and properties of (Ga, Mn)As on Si (100) substrate , 2002 .
[5] R. Moriya,et al. Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As. , 2002, Physical review letters.
[6] X. Liu,et al. Anisotropic magnetoresistance inGa1−xMnxAs , 2002, cond-mat/0202508.
[7] J. E. Mattson,et al. A Group-IV Ferromagnetic Semiconductor: MnxGe1−x , 2002, Science.
[8] A. Oiwa,et al. Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K , 2002, cond-mat/0201363.
[9] A. Hovinen,et al. Magnetotransport in ferromagnetic resonant tunnelling diodes , 2002 .
[10] H. Ohno,et al. Microscopic identification of dopant atoms in Mn-doped GaAs layers , 2002 .
[11] A. Gossard,et al. Electrical control of spin coherence in semiconductor nanostructures , 2001, Nature.
[12] I. Vurgaftman,et al. Curie-temperature enhancement in ferromagnetic semiconductor superlattices , 2001 .
[13] G. Kioseoglou,et al. Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN , 2001 .
[14] A. Zunger,et al. Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2. , 2001, Physical review letters.
[15] Tomoji Kawai,et al. Magnetic and electric properties of vanadium doped ZnO films , 2001 .
[16] Stuart A. Wolf,et al. Spintronics: A Spin-Based Electronics Vision for the Future , 2001, Science.
[17] K. Nagasaka,et al. Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs , 2001 .
[18] M. J. Reed,et al. Room temperature ferromagnetic properties of (Ga, Mn)N , 2001 .
[19] S. Pearton,et al. Characterization of high dose Fe implantation into p-GaN , 2001 .
[20] Y. Higo,et al. Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As , 2001, cond-mat/0111163.
[21] Hideomi Koinuma,et al. Ferromagnetism in Co-Doped TiO2 Rutile Thin Films Grown by Laser Molecular Beam Epitaxy , 2001 .
[22] T. Jungwirth,et al. Anomalous Hall effect in ferromagnetic semiconductors. , 2001, Physical review letters.
[23] Makoto Kohda,et al. A Spin Esaki Diode , 2001, cond-mat/0110241.
[24] D D Awschalom,et al. Ferromagnetic Imprinting of Nuclear Spins in Semiconductors , 2001, Science.
[25] D. K. Young,et al. Spin-polarized Zener tunneling in (Ga,Mn)As , 2001, cond-mat/0110062.
[26] X. Liu,et al. Enhancement of magnetic coercivity and ferromagnetic transition temperature by proximity effects in the GaMnAs–ZnMnSe multilayer system , 2001 .
[27] M. Kamińska,et al. Paramagnetism and antiferromagnetic d–d coupling in GaMnN magnetic semiconductor , 2001 .
[28] P. Kuivalainen. Spin-dependent transport in heavily Mn-doped GaAs , 2001 .
[29] H. katayama-Yoshida,et al. New valence control and spin control method in GaN and AlN by codoping and transition atom doping , 2001 .
[30] Hoi Sing Kwok,et al. Room-temperature ultraviolet emission from an organic light-emitting diode , 2001 .
[31] A. Twardowski,et al. Ferromagnetism of GaMnAs studied by polarized neutron reflectometry , 2001 .
[32] J. Masek,et al. Self-Compensating Incorporation of Mn in Ga1-xMnxAs , 2001 .
[33] B. Hennion,et al. Interlayer Exchange Coupling in Short Period GaMnAs/GaAs Superlattices , 2001 .
[34] V. Osinniy,et al. Fermi Level Position in GaMnAs -- a Thermoelectric Study , 2001 .
[35] M. Sarachik,et al. Bhatt, Bogdanovich, and Sarachik Reply: , 2001 .
[36] Stephen J. Pearton,et al. Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN , 2001 .
[37] Technology,et al. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0 0 0 1) showing the ferromagnetic behaviour at room temperature , 2001, cond-mat/0108159.
[38] Tomoji Kawai,et al. Magnetic and electric properties of transition-metal-doped ZnO films , 2001 .
[39] M. Cardona,et al. Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn , 2001 .
[40] H. Ohno,et al. Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures , 2001 .
[41] J. Szczytko,et al. Optical absorption in random media: Application to Ga{sub 1-x}Mn{sub x}As epilayers , 2001 .
[42] T. Chikyow,et al. Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors , 2001 .
[43] S. Katsumoto,et al. Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors , 2001 .
[44] Kazunori Sato Katayama-Yoshida. Materials Design of Transparent and Half-Metallic Ferromagnets in V- or Cr-Doped ZnS, ZnSe and ZnTe without P- or N-type Doping Treatment , 2001 .
[45] T. Dietl,et al. Magnetic domains in III-V magnetic semiconductors , 2001, cond-mat/0107009.
[46] J. Fernández-Rossier,et al. Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors , 2001, cond-mat/0106548.
[47] Y. Higo,et al. Large Tunneling Magnetoresistance in GaMnAs / AlAs / GaMnAs Ferromagnetic Semiconductor Tunnel Junctions , 2001 .
[48] S. Sarma,et al. Transition temperature of ferromagnetic semiconductors: a dynamical mean field study. , 2001, Physical review letters.
[49] D. Awschalom,et al. Persistent sourcing of coherent spins for multifunctional semiconductor spintronics , 2001, Nature.
[50] E. Hankiewicz,et al. Single ion anisotropy of Mn doped GaAs measured by EPR , 2001, cond-mat/0106227.
[51] H. Saito,et al. Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs , 2001 .
[52] Y. Higo,et al. Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions , 2001 .
[53] T. Schulthess,et al. Electronic structure and magnetic interactions in Mn doped semiconductors , 2001 .
[54] H. Ohno,et al. Growth and properties of (Ga,Mn)As films with high Mn concentration , 2001 .
[55] M. Schilfgaarde,et al. Anomalous exchange interactions in III-V dilute magnetic semiconductors , 2001 .
[56] L. Molenkamp,et al. Lattice constant variation and complex formation in zincblende gallium manganese arsenide , 2001, cond-mat/0105562.
[57] K. Ku,et al. Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs , 2001, cond-mat/0105541.
[58] S. Sanvito,et al. Influence of the local As antisite distribution on ferromagnetism in (Ga, Mn)As , 2001 .
[59] Stephen J. Pearton,et al. Magnetic and structural properties of Mn-implanted GaN , 2001 .
[60] A. Vantomme,et al. Direct evidence for implanted Fe on substitutional Ga sites in GaN , 2001 .
[61] Hiroshi Katayama-Yoshida,et al. Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors , 2001 .
[62] M. Kanamura,et al. Growth of InMnAsSb/InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties , 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).
[63] X. F. Wang,et al. Spin-polarized transport in GaMnAs multilayers , 2001, cond-mat/0105145.
[64] Hsiu-Hau Lin,et al. Ferromagnetism and spin waves in diluted magnetic semiconductors , 2001 .
[65] A. Loidl,et al. Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As , 2001 .
[66] J. Yoshino,et al. MBE growth and properties of 3d transition metal-doped GaAs , 2001 .
[67] H. Ohno,et al. Magnetic circular dichroism in Mn 2p core absorption of Ga1−xMnxAs , 2001 .
[68] G. Kioseoglou,et al. Local structure around Fe in the diluted magnetic semiconductors Ga 1¿x Fe x As studied by x-ray absorption fine structure , 2001 .
[69] A. Oiwa,et al. Infrared optical conductivity of In1−xMnxAs , 2001 .
[70] H. Ohno,et al. Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes , 2001 .
[71] Y. Higo,et al. Large tunneling magnetoresistance (>70%) in GaMnAs/AlAs/GaMnAs single-barrier ferromagnetic semiconductor tunnel junctions , 2001 .
[72] J. Yoshino,et al. Effect of Mn on the low temperature growth of GaAs and GaMnAs , 2001 .
[73] Y. Satoh,et al. Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs , 2001 .
[74] O. Sakai,et al. Magnetic interaction in low density carrier ferromagnetic semiconductors , 2001 .
[75] P. Svedlindh,et al. Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures , 2001 .
[76] H. Ohno,et al. Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates , 2001 .
[77] H. Munekata,et al. Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy , 2001 .
[78] J. Inoue,et al. Spin-dependent transport in a double barrier structure with a ferromagnetic material emitter , 2001 .
[79] H. Ohno,et al. Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions , 2001 .
[80] Masaaki Tanaka,et al. Electronic structure of Ga1−xMnxAs studied by angle-resolved photoemission spectroscopy , 2001 .
[81] H. Akai,et al. Electronic structure of superlattices of II–VI/III–V diluted magnetic semiconductors , 2001 .
[82] Masafumi Shirai,et al. Electronic and magnetic properties of 3d transition-metal-doped GaAs , 2001 .
[83] S. Koshihara,et al. Formation of FeAs and Fe crystallites in GaAs–Fe composite structures and their roles in light-enhanced magnetization , 2001 .
[84] Yu-Jun Zhao,et al. Magnetism of chalcopyrite semiconductors: Cd1-xMnxGeP2 , 2001 .
[85] O. Sakai,et al. Study on the magnetic and transport properties of low density carrier ferromagnetic semiconductors , 2001 .
[86] H. Akinaga,et al. Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy , 2001 .
[87] P. Kacman. Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures , 2001 .
[88] Hiroshi Katayama-Yoshida,et al. Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnO , 2001 .
[89] S. Sarma,et al. Spin injection through the depletion layer: A theory of spin-polarized p-n junctions and solar cells , 2001, cond-mat/0103473.
[90] Yoshiaki Hashimoto,et al. Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As , 2001 .
[91] P. Svedlindh,et al. Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates , 2001, cond-mat/0103134.
[92] M. Kamińska,et al. Magnetic and optical properties of GaMnN magnetic semiconductor , 2001 .
[93] J. Furdyna,et al. Electron paramagnetic resonance of Mn in In 1 − x Mn x As epilayers , 2001 .
[94] Hideo Ohno,et al. Toward Functional Spintronics , 2001, Science.
[95] V. Dugaev,et al. Ferromagnetism in magnetically doped III-V semiconductors. , 2001, Physical review letters.
[96] A. Oiwa,et al. Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb , 2001 .
[97] Pin Lyu,et al. Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions , 2001, cond-mat/0101206.
[98] Masashi Kawasaki,et al. Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide , 2001, Science.
[99] H. Ohno,et al. A ferromagnetic III–V semiconductor: (Ga,Mn)As , 2001 .
[100] H. Ohno,et al. Electric-field control of ferromagnetism , 2000, Nature.
[101] H. Bender,et al. Growth and characterization of low-temperature grown GaN with high Fe doping , 2000 .
[102] J. Schliemann,et al. Monte Carlo Study of Ferromagnetism in (III,Mn)V Semiconductors , 2000, cond-mat/0012233.
[103] Y. Higo,et al. Atomic-scale study of GaMnAs/GaAs layers , 2000 .
[104] Inoue,et al. Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As , 2000, Physical review letters.
[105] P. Ordejón,et al. First-principles study of the origin and nature of ferromagnetism in Ga 1-x Mn x As , 2000, cond-mat/0011050.
[106] H. Akinaga,et al. Material Design of Half-Metallic Zinc-Blende CrAs and the Synthesis by Molecular-Beam Epitaxy , 2000 .
[107] H. Ohno,et al. Optical manipulation of nuclear spin by a two-dimensional electron gas. , 2000, Physical review letters.
[108] H. Ohno,et al. Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy , 2000 .
[109] E. Johnston-Halperin,et al. (Ga,Mn)As as a digital ferromagnetic heterostructure , 2000 .
[110] J. Schliemann,et al. Limits on the Curie temperature of (III,Mn)V ferromagnetic semiconductors , 2000, cond-mat/0010036.
[111] Takayuki Ishibashi,et al. Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd1¡xMnxGeP2 , 2000 .
[112] B. R. Bennett,et al. Robust electrical spin injection into a semiconductor heterostructure , 2000 .
[113] Hideo Ohno,et al. Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures , 2000 .
[114] H. Ohno,et al. Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope , 2000 .
[115] A. Petukhov,et al. Spin-dependent resonant tunneling in double-barrier magnetic heterostructures , 2000 .
[116] S. Koleśnik,et al. Carrier-induced ferromagnetism in p − Zn 1 − x Mn x Te , 2000, cond-mat/0007502.
[117] H. Ohno,et al. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors , 2000, cond-mat/0007190.
[118] Zhang,et al. Spin hall effect in the presence of spin diffusion , 2000, Physical review letters.
[119] A. Endo,et al. Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As , 2000 .
[120] G. Kamler,et al. Raman scattering study of Ga1−xMnxN crystals , 2000 .
[121] T. Jungwirth,et al. Theory of magnetic anisotropy in III 1 − x Mn x V ferromagnets , 2000, cond-mat/0006093.
[122] L. Ilver,et al. Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers , 2000 .
[123] B. Min,et al. Electronic structures of III–V based ferromagnetic semiconductors: half-metallic phase , 2000 .
[124] Hiroshi Katayama-Yoshida,et al. Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors , 2000 .
[125] H. Ohno,et al. MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As , 2000 .
[126] Y. Tokura. Colossal Magnetoresistive Oxides , 2000 .
[127] M. Cardona,et al. Spin-flip Raman scattering in Mn-doped GaAs: exchange interaction and g factor renormalization , 2000 .
[128] H. Ohno,et al. Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As , 2000 .
[129] H. Ohno,et al. Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb , 2000 .
[130] S. Koshihara,et al. Fe-based magnetic-semiconductor hybrid structures for photocarrier-induced magnetism , 2000 .
[131] H. Ohno,et al. Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures , 2000 .
[132] P. Ball. Meet the spin doctors … , 2000, Nature.
[133] Stuart A. Wolf,et al. Spintronics, Electronics for the Next Millenium? , 2000 .
[134] W. Stolz,et al. Optical characterisation of MOVPE-grown Ga1−xMnxAs semimagnetic semiconductor layers , 2000 .
[135] T. Kotani. Ab initio random-phase-approximation calculation of the frequency-dependent effective interaction between 3d electrons: Ni, Fe, and MnO , 2000 .
[136] I. Lima,et al. Ferromagnetism and canted spin phase in AlAs/Ga 1-x Mn x As single quantum wells: Monte Carlo simulation , 2000, cond-mat/0002254.
[137] H. Ohno,et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors , 2000, Science.
[138] K. Świątek,et al. Ordered magnetic phase in Cd1-xMnxTe/Cd1-y-zMgyZnzTe : N heterostructures: magnetooptical studies , 2000 .
[139] D. Awschalom,et al. Coherent transfer of spin through a semiconductor heterointerface. , 2000, Physical review letters.
[140] Kikkawa,et al. All-optical magnetic resonance in semiconductors , 2000, Science.
[141] Lin,et al. Theory of diluted magnetic semiconductor ferromagnetism , 2000, Physical review letters.
[142] K. Hara,et al. Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor (Ga, Fe)As , 2000 .
[143] D. K. Young,et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure , 1999, Nature.
[144] R. Fiederling,et al. Injection and detection of a spin-polarized current in a light-emitting diode , 1999, Nature.
[145] S. Sarma,et al. Spintronics: electron spin coherence, entanglement, and transport , 1999, cond-mat/9912040.
[146] R. Bhatt,et al. Monte Carlo Simulations Of Doped, Diluted Magnetic Semiconductors — A System With Two Length Scales , 1999, cond-mat/9912395.
[147] A. Bhattacharjee,et al. Model for the Mn acceptor in GaAs , 1999 .
[148] Hideo Ohno,et al. Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in ( Ga 1 − x Mn x ) As , 1999 .
[149] S. Koleśnik,et al. Carrier induced ferromagnetic interactions and transport properties of p-Zn(1−x)MnxTe epilayers , 1999, cond-mat/9910131.
[150] H. Ohno. Properties of ferromagnetic III–V semiconductors , 1999 .
[151] H. Ohno,et al. Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field , 1999, cond-mat/9909393.
[152] Masaaki Tanaka,et al. Mn impurity in Ga 1 − x Mn x As epilayers , 1999 .
[153] M. Hofmann,et al. COHERENT EXCITATION SPECTROSCOPY ON INHOMOGENEOUS EXCITON ENSEMBLES , 1999 .
[154] H. Ohno,et al. INTEGRATED MICROMECHANICAL CANTILEVER MAGNETOMETRY OF GA1-XMNXAS , 1999 .
[155] T. Dietl,et al. Carrier-mediated ferromagnetic interactions in structures of magnetic semiconductors , 1999 .
[156] J. Hirsch. Spin Hall Effect , 1999, cond-mat/9906160.
[157] Kang L. Wang,et al. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.
[158] H. Ohno,et al. Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth , 1999 .
[159] Hideo Ohno,et al. Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers , 1999 .
[160] A. Millis,et al. Berry Phase Theory of the Anomalous Hall Effect: Application to Colossal Magnetoresistance Manganites , 1999, cond-mat/9905007.
[161] N. Suzuki,et al. First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)As , 1999 .
[162] Masaaki Tanaka,et al. Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures , 1999 .
[163] H. Ohno,et al. InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates , 1999 .
[164] S. von Molnár,et al. Mixed-valence manganites , 1999 .
[165] H. Ohno,et al. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb , 1999 .
[166] Masaaki Tanaka,et al. MAGNETIC AND TRANSPORT PROPERTIES OF III-V BASED MAGNETIC SEMICONDUCTOR (GAMN)AS : GROWTH CONDITION DEPENDENCE , 1999 .
[167] H. Ohno,et al. ESR study of Mn doped II–VI and III–V DMS , 1998 .
[168] H. Ohno,et al. Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As , 1998 .
[169] H. Ohno,et al. Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures , 1998 .
[170] Masaaki Tanaka,et al. Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor Ga1−xMnxAs , 1998 .
[171] Masaaki Tanaka,et al. Properties of III-V based (Ga1-xMnx)As/AlAs magnetic semiconductor superlattices , 1998 .
[172] T. Jungwirth,et al. Interlayer coupling in ferromagnetic semiconductor superlattices , 1998, cond-mat/9810100.
[173] H. Akai. Ferromagnetism and Its Stability in the Diluted Magnetic Semiconductor (In, Mn)As , 1998 .
[174] L. Ilver,et al. MBE Growth and Properties of GaMnAs(100) Films , 1998 .
[175] Masaaki Tanaka,et al. Core-level photoemission study of Ga1-xMnxAs , 1998 .
[176] H. Ohno,et al. Making nonmagnetic semiconductors ferromagnetic , 1998, Science.
[177] Masaaki Tanaka,et al. Local structures of III-V diluted magnetic semiconductors Ga 1 − x Mn x As studied using extended x-ray-absorption fine structure , 1998 .
[178] H. Ohno,et al. Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy , 1998 .
[179] H. Ohno,et al. Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs , 1998 .
[180] Eicke R. Weber,et al. Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs , 1998 .
[181] H. Ohno,et al. Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates , 1998 .
[182] B. E. Kane. A silicon-based nuclear spin quantum computer , 1998, Nature.
[183] G. Marques,et al. Strain-induced enhancement of resonant current of holes in multilayered heterostructures , 1998 .
[184] H. Ohno,et al. Faraday rotation of ferromagnetic (Ga,Mn)As , 1998 .
[185] H. Ohno,et al. Transport properties and origin of ferromagnetism in (Ga,Mn)As , 1998 .
[186] Masaaki Tanaka. Epitaxial ferromagnetic thin films and heterostructures of Mn-based metallic and semiconducting compounds on GaAs , 1997 .
[187] G. Borghs,et al. Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs , 1997 .
[188] Masaaki Tanaka,et al. III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices , 1997 .
[189] H. Ohno,et al. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW TEMPERATURES UNDER HIGH AS OVERPRESSURE , 1997 .
[190] Tomasz Dietl,et al. Observation of a Ferromagnetic Transition Induced by Two-Dimensional Hole Gas in Modulation-Doped CdMnTe Quantum Wells , 1997 .
[191] H. Ohno,et al. Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs , 1997 .
[192] Hiro Munekata,et al. FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS/GASB , 1997 .
[193] Masaaki Tanaka,et al. (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy , 1997 .
[194] H. Ohno,et al. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs , 1997 .
[195] A. Oiwa,et al. Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures , 1997 .
[196] H. Ohno,et al. Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures , 1997 .
[197] E. Janzén,et al. Electronic structure of the GaAs:MnGa center , 1997 .
[198] Tomasz Dietl,et al. FREE CARRIER-INDUCED FERROMAGNETISM IN STRUCTURES OF DILUTED MAGNETIC SEMICONDUCTORS , 1997 .
[199] H. Ohno,et al. (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy , 1997 .
[200] D. DiVincenzo,et al. Quantum computation with quantum dots , 1997, cond-mat/9701055.
[201] A. Vasson,et al. Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study. , 1996, Physical review. B, Condensed matter.
[202] J. Szczytko,et al. The s,p-d exchange interaction in GaAs heavily doped with Mn , 1996 .
[203] H. Ohno,et al. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs , 1996 .
[204] Fumagalli,et al. Magneto-optic properties and ferromagnetism of (In,Mn)As/(In,Al)As/(Ga,Al)Sb heterostructures. , 1996, Physical review. B, Condensed matter.
[205] H. Bender,et al. Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy , 1996 .
[206] R. Bhatt,et al. Polaron‐polaron interactions in diluted magnetic semiconductors , 1996 .
[207] Majewski,et al. Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors. , 1996, Physical review. B, Condensed matter.
[208] Huang,et al. III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs. , 1996, Physical review. B, Condensed matter.
[209] Löhneysen,et al. Temperature dependence of the far-infrared reflectance spectra of Si:P near the metal-insulator transition. , 1995, Physical review. B, Condensed matter.
[210] C. Rao,et al. Metal-Insulator Transitions Revisited , 1995 .
[211] Hjm Henk Swagten,et al. Calculations of the ferromagnet-to-spin-glass transition in diluted magnetic systems with an RKKY interaction. , 1995, Physical review. B, Condensed matter.
[212] H. Munekata. Anomalous Hall effect in III–V-based magnetic semiconductor heterostructures , 1995 .
[213] Helmut Heinrich,et al. Magneto-Optical Studies of the Type I / Type II Crossover in CdTe/Cd1-xMnxTe Superlattice in Magnetic Fileds up to 45 Tesla , 1995, Materials Science Forum.
[214] T. Baron,et al. Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and CdTe by molecular beam epitaxy , 1994 .
[215] S. Basu,et al. Electrical Properties of Gallium Manganese Antimonide: a New Diluted Magnetic Semiconductor , 1994 .
[216] I. Miotkowski,et al. Temperature dependent localization in diluted magnetic semiconductors , 1994 .
[217] A. Zaslavsky,et al. Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics , 1993 .
[218] Fujimori,et al. Configuration-interaction description of transition-metal impurities in II-VI semiconductors. , 1993, Physical review. B, Condensed matter.
[219] Wilson,et al. Thermal activation of carriers from a metallic impurity band. , 1993, Physical review. B, Condensed matter.
[220] S. A. Obukhov. Phase transition in a system of magnetic impurities , 1993 .
[221] Wei,et al. Electronic origins of the magnetic phase transitions in zinc-blende Mn chalcogenides. , 1993, Physical review. B, Condensed matter.
[222] S. Guha,et al. Microstructure and homogeneity in (In,Mn)As III‐V‐based diluted magnetic semiconductor epitaxial films , 1993 .
[223] Huang,et al. Local structure about Mn atoms in In1-xMnxAs diluted magnetic semiconductors. , 1993, Physical review. B, Condensed matter.
[224] Dietl,et al. Wigner-Seitz approach to spin splitting. , 1992, Physical review. B, Condensed matter.
[225] Chang,et al. Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors. , 1992, Physical review letters.
[226] D. Look. On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperature , 1991 .
[227] H. Ohno,et al. P-Type diluted magnetic III–V semiconductors , 1991 .
[228] H. Ohno,et al. New III‐V diluted magnetic semiconductors (invited) , 1991 .
[229] Chuang,et al. Resonant tunneling of holes in the multiband effective-mass approximation. , 1991, Physical review. B, Condensed matter.
[230] R. Bhatt,et al. Transport and thermodynamic properties across the metal-insulator transition , 1991 .
[231] H. Ohno,et al. New diluted magnetic semiconductors based on III–V compounds , 1991 .
[232] Price. Critical-thickness and growth-mode transitions in highly strained InxGa1-xAs films. , 1991, Physical review letters.
[233] I. Lima,et al. Interaction between two magnetic impurities in a quantum well , 1990 .
[234] H. Ohno,et al. Epitaxy of III-V diluted magnetic semiconductor materials , 1990 .
[235] S. A. Obukhov,et al. Effect of exchange interaction on metal-dielectric transition in p-InSb (Mn) , 1989 .
[236] J. Furdyna,et al. Diluted Magnetic Semiconductors , 1988, Proc. IEEE.
[237] Walukiewicz. Mechanism of Fermi-level stabilization in semiconductors. , 1988, Physical review. B, Condensed matter.
[238] Zhang,et al. Effective Hamiltonian for the superconducting Cu oxides. , 1988, Physical review. B, Condensed matter.
[239] Schneider,et al. Electronic structure of the neutral manganese acceptor in gallium arsenide. , 1987, Physical review letters.
[240] A. Mauger,et al. The magnetic, optical, and transport properties of representatives of a class of magnetic semiconductors: The europium chalcogenides , 1986 .
[241] T. Wojtowicz,et al. Metal-insulator transition in semimagnetic semiconductors. , 1986, Physical review letters.
[242] Frankel,et al. Carrier-concentration-induced ferromagnetism in PbSnMnTe. , 1986, Physical review letters.
[243] Colin E. C. Wood,et al. Manganese incorporation behavior in molecular beam epitaxial gallium arsenide , 1982 .
[244] P. Edwards,et al. Universality aspects of the metal-nonmetal transition in condensed media , 1978 .
[245] J. Krebs,et al. EPR of Cr 2 + ( 3 d 4 ) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion , 1977 .
[246] R. Dingle,et al. Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy , 1975 .
[247] J. Chazalviel. Spin-dependent Hall effect in semiconductors , 1975 .
[248] Mathias V. Schmidt,et al. Strongly quenched deformation potentials of the Mn acceptor in GaAs , 1974 .
[249] Michael E. Fisher,et al. Critical Exponents for Long-Range Interactions , 1972 .
[250] P. Leroux-hugon,et al. Contribution to the theory of the anomalous Hall effect: Influence of the band structure on the skew scattering , 1972 .
[251] A. Yanase,et al. Anomalous Transport Phenomena in Eu-Chalcogenide Alloys , 1968 .
[252] J. Goodenough. Descriptions of outer d electrons in thiospinels , 1968, Journal of Physics and Chemistry of Solids.
[253] R. A. Chapman,et al. Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium Arsenide , 1967 .
[254] S. Methfessel. Potential applications of magnetic rare earth compunds , 1965 .
[255] W. H. Cloud,et al. Magnetic Tetragonal δ Phase in the Mn–Ga Binary , 1965 .
[256] B. Goldstein,et al. Electron Paramagnetic Resonance of Manganese in Gallium Arsenide , 1962 .
[257] A. Arrott. Criterion for Ferromagnetism from Observations of Magnetic Isotherms , 1957 .
[258] C. Zener. Interaction between the d -Shells in the Transition Metals. III. Calculation of the Weiss Factors in Fe, Co, and Ni , 1951 .
[259] Clarence Zener,et al. Interaction between the d -Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite Structure , 1951 .
[260] Clarence Zener,et al. Interaction Between the d Shells in the Transition Metals , 1951 .
[261] H. Fröhlich,et al. Orientation of nuclear spins in metals , 1940, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[262] M. Sarachik,et al. Reply: Bhatt, Bogdanovich, and Sarachik , 2001 .
[263] H. Ohno,et al. Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots , 2001 .
[264] Yu-Jun Zhao,et al. Electronic and magnetic properties of Ga1-xMnxAs: Role of Mn defect bands , 2001 .
[265] H. Ohno,et al. Surfactant effect of Mn on the formation of self-organized InAs nanostructures , 2000 .
[266] D. Awschalom,et al. Lateral drag of spin coherence in gallium arsenide , 1999, Nature.
[267] N. Suzuki,et al. Band structures of zinc-blende-type MnAs and (MnAs)1(GaAs)1 superlattice , 1998 .
[268] H. Ohno,et al. Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs , 1998 .
[269] H. Ohno,et al. Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal–Insulator Transition , 1998 .
[270] Leland Chang,et al. Diluted magnetic III–V semiconductor structures , 1992 .
[271] A. Katsui,et al. Iodine-doped low-resistivity n-type ZnSe films grown by MOVPE , 1988 .
[272] Gottfried Landwehr,et al. High Magnetic Fields in Semiconductor Physics III , 1987 .
[273] A. Aronov,et al. Electron–Electron Interaction In Disordered Conductors , 1985 .
[274] Charles R. Westgate,et al. The Hall effect and its applications , 1980 .
[275] Shang‐keng Ma. Modern Theory of Critical Phenomena , 1976 .
[276] H. C. Casey,et al. Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .
[277] P. Wallace,et al. New developments in semiconductors , 1973 .