Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers
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[1] J. Speck,et al. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h , 2014 .
[2] Tao Wang,et al. High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures , 2012, Microscopy and Microanalysis.
[3] C. T. Foxon,et al. Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy , 2012 .
[4] C. T. Foxon,et al. Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy , 2011 .
[5] C. T. Foxon,et al. Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates , 2010 .
[6] C. T. Foxon,et al. Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates , 2008 .
[7] James S. Speck,et al. Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy , 2000 .